Epitaxial growth structure in GaN base green-light light emitting diode (LED) with P-type GaN

Abstract

The invention provides an epitaxial growth structure in a GaN base green-light light emitting diode (LED) with P-type GaN, and relates to the technical field of growth of the P-type GaN applied in a high-brightness GaN base green-light LED. The epitaxial growth structure in the GaN base green-light LED with the P-type GaN comprises a GaN nucleating layer, an un-doped GaN layer, an n-type GaN layer, an InGaN / GaN multiple-quantum-well active layer, the P-type GaN and an InGaN current tunneling layer, wherein the GaN nucleating layer, the un-doped GaN layer, the n-type GaN layer, the InGaN / GaN multiple-quantum-well active layer, the P-type GaN and the InGaN current tunneling layer sequentially grow on a substrate. The epitaxial growth structure in the GaN base green-light LED with the P-type GaN is characterized in that the P-type GaN is composed of a low-temperature P-type GaN hole injection layer, a P-type Al(In) GaN electron barrier layer and a P-type GaN hole activation layer. The P-type GaN with the structure is applied in the growth of the high-brightness GaN base green-light LED. The brightness of a 520 nm green-light chip with the size of 20mil*40mil reaches 75mw under a 120mA current in a COW. After the epitaxial growth structure is encapsulated, external quantum efficiency reaches 31 percent and reaches the domestic leading level. Meanwhile, anti-static performance of the green-light chip with the size of 20mil*40mil is improved to over 8000V.

Description

technical field [0001] The invention relates to the technical field of growing P-type GaN used in high-brightness GaN-based green LEDs. Background technique [0002] In order to obtain quantum wells with higher In composition in InGaN green LEDs, the growth temperature of the quantum well active region is much lower than that of the P-type Al(In)GaN electron blocking layer and P-type GaN, so its crystal quality is poor. At the same time, The P-type Al(In)GaN electron blocking layer and P-type GaN grown at a higher temperature will fragment the active region, affecting its crystal quality and radiation recombination efficiency. Furthermore, the P-type Al(In)GaN electron blocking layer commonly used in the epitaxial structure of InGaN green LEDs will bend the energy band downward due to lattice mismatch, which will affect the injection of holes from P-type GaN into the active region. [0003] How to improve the above factors is also a breakthrough for people to explore high-b...

AI Technical Summary

Problems solved by technology

[0002] In order to obtain quantum wells with higher In composition in InGaN green LEDs, the growth temperature of the quantum well active region is much lower than that of the P-type Al(In)GaN electron blocking layer and P-type GaN, so its crystal quality is poor. At the same time, P-type Al(In)GaN electron blocking layer and P-type GaN grown at higher temperature will fragment the active region, affecting its crystal quality and radiation recombination efficiency

Furthermore, the P-type Al(In)GaN electron blocking layer commonly used in the epitaxial structure of InGaN green LEDs will bend the energy band downward due to lattice mismatch, which will affect the injection of holes from P-type GaN into the active region.

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