Epitaxial growth structure in GaN base green-light light emitting diode (LED) with P-type GaN
An epitaxial growth, green-based technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as downward bending, affecting crystal quality and radiation recombination efficiency, fragmentation, etc.
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[0010] figure 1 Among them, 1 is a sapphire substrate, 2 is a GaN nucleation layer, 3 is an undoped GaN layer, 4 is an n-type GaN layer, 5 is an InGaN / GaN multiple quantum well active layer, and 6(a) is a low-temperature P-type GaN hole injection layer, 6(b) is a P-type Al(In)GaN electron blocking layer, 6(c) is a P-type GaN hole activation layer, and 7 is an InGaN current tunneling layer.
[0011] From figure 1 It can be seen that a GaN nucleation layer 2, an undoped GaN layer 3, an n-type GaN layer 4, an InGaN / GaN multiple quantum well active layer 5, a P-type GaN, and a low-temperature P-type GaN hole are sequentially grown on the substrate 1. The injection layer 6(a), the P-type Al(In)GaN electron blocking layer 6(b), the P-type GaN hole activation layer 6(c), and the InGaN current tunneling layer 7.
[0012] From figure 2 It can be seen that the ESD test of LEDs with low-temperature p-type GaN has a yield rate of 100% at a reverse voltage of 8000V, while the pass rate of ESD...
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