An Electron Beam Exposure Method Using Ultraviolet Curing Glue

Abstract

The invention relates to an electron beam exposure method implemented by the aid of ultraviolet setting adhesive. The electron beam exposure method includes steps of 1), cleaning a substrate and coating an adhesion layer on the substrate; 2), spinning stripping layer photoresist on the adhesion layer; 3), baking the substrate; 4), spinning electron beam photoresist with ultraviolet sensitivity on the stripping layer photoresist; 5), baking the substrate; 6), performing electron beam exposure for the electron beam photoresist; 7), developing the electron beam photoresist; 8), irradiating a graph of the developed electron beam photoresist by ultraviolet rays so that the electron beam photoresist is subjected to cross-linking and solidifying; and 9), developing the stripping layer photoresist. The electron beam exposure method has the advantages that the ultraviolet sensitivity of the electron beam photoresist is utilized, a ratio of the developing speed of an LOL (loss-of-lock) stripping layer to the developing speed of the electron beam photoresist is increased by an ultraviolet setting adhesive manner, processing compatibility of double photoresist layers is realized, and sheer photoresist side walls can be obtained.

Description

technical field

[0001] The invention belongs to the field of micro-nano electronic device processing and micro-nano electronic mechanical system processing technology, and specifically relates to an electron beam exposure process method using ultraviolet curing glue. Background technique

[0002] With the expansion of microelectronics technology to the nanometer level, electron beam direct writing exposure technology has become an important part of the processing technology of nanoelectronic devices and nanoelectromechanical systems. Electron beam exposure technology is widely used in scientific research fields such as new device development and new structure manufacturing due to its good controllability, high precision, and strong flexibility, and is gradually applied to large-scale industrial batch production. However, due to the existence of the proximity effect and the Gaussian distribution of electrons, it is very difficult to obtain an undercut photoresist structure in...

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