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Photosensitive resin composition

A technology of photosensitive resin and composition, which is applied in the field of permanent resist) and negative photoresist, and can solve the problems of chemical reagent resistance such as inability to form patterns, acid resistance, alkali resistance, solvent resistance, etc. High transparency, excellent heat resistance, excellent resistance to change over time, and excellent alkali developability

Inactive Publication Date: 2015-11-25
ADEKA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These conventional negative photoresists having a siloxane structure have insufficient chemical resistance such as acid resistance, alkali resistance, and solvent resistance, and also have insufficient heat resistance as a permanent resist.
In contrast, as a negative photoresist with improved chemical resistance or heat resistance, a resin composition containing the following polysiloxane as a main ingredient is known (for example, refer to Patent Document 3). The polysiloxane is obtained by condensing a diarylsilanediol, an alkoxysilane compound having an epoxy group or a (meth)acrylic group, and an alkoxysilane compound having an anhydride structure, but the resin Alkali developability of the composition is insufficient and fine patterns cannot be formed

Method used

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Examples

Experimental program
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Effect test

manufacture example 1

[0095] [Production Example 1: Production of the polysiloxane compound A-1 of the present invention]

[0096]

[0097] 300 g of toluene as a solvent and 120 g of 2,4,6,8-tetramethylcyclotetrasiloxane as a compound represented by the above general formula (3a) were placed in a reaction vessel equipped with a stirrer, a thermometer, and a reflux device. (0.5 mol), and 0.0001 g of a platinum-divinyltetramethyldisiloxane complex (Karstedt catalyst) as a catalyst. While stirring, 213 g (1.5 mol) of tert-butyl methacrylate, which is a compound represented by the above general formula (4b), was added at 60° C. over 1 hour, followed by stirring for 4 hours and aging. Next, after adding 77 g (0.52 mol) of vinyltrimethoxysilane as a compound represented by the general formula (5a) over 1 hour, it stirred at 70 degreeC for 5 hours, and it aged. The solvent was distilled off from the reaction solution under reduced pressure at 60°C to obtain a cyclic siloxane compound a (the ring repres...

manufacture example 2 and 3

[0100] [Production Examples 2 and 3: Production of Polysiloxane Compounds A-2 and A-3 of the Present Invention]

[0101] The polysiloxane compound A of the present invention was obtained in the same manner as in Production Example 1, except that the amount of the compound represented by the above general formulas (1) to (3) was changed to the number of moles shown in Table 1 below. 50% PGMEA solution of -2 and A-3. The mass average molecular weights of the obtained polysiloxane compounds A-2 and A-3 of the present invention were determined by GPC analysis.

manufacture example 4

[0102] [Production Example 4: Production of the polysiloxane compound A-4 of the present invention]

[0103] Using trimethylchlorosilane, the silanol group of the polysiloxane compound A-1 of the present invention obtained in Production Example 1 was protected with a trimethylsilyl group by a conventional method to obtain the polysiloxane of the present invention Compound A-4 in 50% PGMEA solution. The mass average molecular weight of the obtained polysiloxane compound A-4 of this invention was calculated|required by GPC analysis.

[0104] The number of moles of each compound used in the reaction of the polysiloxane compounds A-1 to A-4 of the present invention obtained in Production Examples 1 to 4 in Table 1 (numbers in () in Table 1), by The mass average molecular weight obtained by GPC analysis and the state of the terminal group are described.

[0105] Table 1

[0106]

[0107] MCSi(OMe) 3 :3-Methacryloxypropyltrimethoxysilane

[0108] Ph 2 Si(OMe) 2 :Diphenyldi...

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Abstract

The present invention provides: an alkali-developable and negative-type photosensitive resin composition which exhibits excellent transparency, chemical resistance, heat resistance and alkali developability and which exhibits excellent heat resistance and long-term deterioration resistance requisite for a permanent resist and is suitable as an insulating layer; and a permanent resist using the photosensitive resin composition. Specifically, the present invention provides a photosensitive resin composition which comprises both a polysiloxane compound obtained by hydrolytic condensation among a specific unsaturated silane compound, a specific silane compound and a specific cyclic siloxane compound, and a photo radical generator.

Description

technical field [0001] The present invention relates to a photosensitive resin composition using a specific polysiloxane compound. Specifically, it relates to an alkali-developable negative photosensitive resin composition and a negative photoresist using the photosensitive resin composition. etchants (especially permanent resists). Background technique [0002] A negative photoresist is a photoresist whose solubility in a developing solution is lowered by exposure, and the exposed part remains after development. Since organic solvents are used in conventional negative-type photoresist developers, there are problems in terms of environmental protection, sanitation, and flammability, and organic solvents will swell the photoresist during development, so It is difficult to cope with fine wiring, and it is not suitable for manufacturing highly integrated semiconductor circuits. For this reason, it is desired to develop a negative photoresist that can be developed with an alka...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/075C08F290/06C08G77/20G03F7/004
CPCC08G77/20C08F299/08G03F7/032G03F7/038G03F7/0757G03F7/033G03F7/0382G03F7/075
Inventor 岩岛智幸松本拓也末吉孝竹之内宏美尾见仁一
Owner ADEKA CORP
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