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Anti-diffusion layer, preparation method of layer, TFT (thin film transistor), array substrate and display device

A technology of thin film transistor and anti-diffusion layer, applied in the fields of anti-diffusion layer and preparation, array substrate, thin film transistor, and display device, can solve the problems of volatilization of low-resistance materials, high ambient temperature, affecting the performance of display device, etc., and achieves simple equipment. , less capital investment, and the effect of improving display quality

Active Publication Date: 2013-08-07
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problems to be solved by the present invention include, in view of the high ambient temperature required for the preparation of the tantalum dioxide diffusion prevention layer by PVD or CVD in the prior art, which causes the volatilization of low-resistance materials and affects the performance of the display device. Anti-diffusion layer of tantalum dioxide prepared in normal temperature environment, its preparation method and thin film transistor, array substrate, display device

Method used

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  • Anti-diffusion layer, preparation method of layer, TFT (thin film transistor), array substrate and display device

Examples

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Embodiment 1

[0016] This embodiment provides a kind of preparation method of anti-diffusion layer, such as figure 1 As shown, it includes: the conductive substrate 1 is used as the anode and placed in the tantalum sulfate solution (that is, the electrolyte 3), and the graphite electrode 4 (other electrodes can also be used, of course) is also placed in the electrolyte 3 as the cathode. An anti-diffusion layer of tantalum dioxide is formed on the conductive substrate 1 by anodic oxidation.

[0017] Wherein, the conductive substrate 1 is preferably a gate of a thin film transistor on the substrate 2, and the material used for the conductive substrate 1 is a low-resistance material. In this embodiment, copper is taken as an example.

[0018] Specifically, the mass concentration range of the tantalum sulfate solution is 6-9%, and the pH value thereof is strictly controlled between 8-10 by using ammonia water, so as to prevent the conductive matrix 1 from being corroded. The AC power supply 5 ...

Embodiment 2

[0025] This embodiment provides an anti-diffusion layer, which is prepared by the method described in Example 1, and the anti-diffusion layer is a tantalum dioxide anti-diffusion layer.

[0026] Since the anti-diffusion layer of this embodiment is prepared by the above-mentioned method, the low-resistance material will not be volatilized during the preparation process, and the performance of the display will not be affected.

Embodiment 3

[0028] This embodiment provides a thin film transistor, which includes a gate disposed above a substrate, and the above-mentioned anti-diffusion layer is formed above the gate; at the same time, a gate insulating layer, a source-drain metal layer, an active layers, passivation layers, and other known structures such as pixel electrodes.

[0029] In the thin film transistor of this embodiment, the gate is preferably made of copper or aluminum.

[0030] Since the above-mentioned anti-diffusion layer is formed on the gate of the thin film transistor of this embodiment, it can effectively prevent copper ions or aluminum ions from diffusing into the gate insulating layer, thereby preventing them from diffusing into the active layer, effectively ensuring Conductivity of thin film transistors.

[0031] The TFT of this embodiment is preferably a bottom-gate type. For a bottom-gate TFT, since the gate is formed prior to the gate insulating layer, the gate can be directly used as a con...

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Abstract

The invention provides an anti-diffusion layer, a preparation method of the layer, a TFT (thin film transistor), an array substrate and a display device, which belong to the technical field of display device preparation and can solve a problem that a grid is volatilized so the performances of a display device are influenced, caused by higher environment temperature required by the preparation of a tantalum dioxide anti-diffusion layer by utilizing PVD (physical vapor deposition) or CVD (chemical vapor deposition) in the prior art. The preparation method of the anti-diffusion layer comprises the following steps of putting a conductive substrate and a cathode in a tantalum sulfate solution, electrifying by taking the conductive substrate as an anode to form the tantalum dioxide anti-diffusion layer on the conductive substrate. The prepared tantalum dioxide anti-diffusion layer can be applied to the preparation of the grid of the TFT.

Description

technical field [0001] The invention relates to the preparation of a display device, in particular to an anti-diffusion layer and a preparation method, a thin film transistor, an array substrate and a display device. Background technique [0002] Thin Film Transistor (TFT, Thin Film Transistor) is a key control component of a display, and its performance is particularly important. In the manufacturing process of amorphous silicon thin film transistors, metal molybdenum (Mo) or molybdenum / aluminum-rubidium alloy (Mo / AlNd) is generally used to make the gate. However, due to the high resistance of metal molybdenum or molybdenum / aluminum-rubidium alloy, in the production of large-scale display devices, the problem of uneven display will occur in the middle part of the display area because the current is smaller than that in the peripheral part. To solve this problem, in the prior art, low-resistance materials (such as copper or aluminum) are often used as gate electrodes, which...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/288H01L29/786H01L29/423H01L29/49
CPCH01L27/1292H01L29/00H01L29/4908H01L29/66742H01L29/78606H01L29/78609
Inventor 姜春生陈海晶王东方
Owner BOE TECH GRP CO LTD
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