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A hybrid lighting white light device

An optical device and device technology, applied in the field of LED and OLED hybrid lighting devices, can solve problems such as insufficient color purity and poor color rendering of LEDs, achieve high brightness and luminous efficiency, and improve the effect of brightness and luminous efficiency

Active Publication Date: 2016-07-20
陕西科诺新显器件技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a hybrid lighting white light device with better color rendering, higher color purity and simple production process, which solves the problems of insufficient color purity of existing OLEDs and poor color rendering of LEDs

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A new type of mixed lighting white light device. Four white light LED chips and one red-green doped OLED device are installed on the same substrate 2. The two ends of the array structure composed of LED chips 1 and the two ends of the OLED device 5 A pair of metal lead wires 4 are drawn out, and the pair of metal lead wires are connected with a DC power supply.

[0029] Power is applied to the array of LED chips and the OLED device, each LED chip and the OLED device will be lit simultaneously, the white light emitted by the LED chip is combined with the yellow light of the OLED, and then the secondary light distribution is realized by the lampshade 3, and finally The mix emits white light for illumination.

[0030] The manufacturing process of the hybrid lighting white light device is as follows:

[0031] 1) Install four white light LED chips and a red-green doped OLED device on the substrate; the structure of the OLED device is:

[0032] ITO / MoO 3 (40nm) / NPB(40nm) / T...

Embodiment 2

[0036] The structure of the red-green doped OLED device is:

[0037] ITO / MoO 3 (60nm) / NPB(40nm) / TCTA(10nm) / CBP:R-4B(2%):GIR1(14%) / BCP(10nm) / Alq3(40nm) / LiF / Al); CBP:R-4B : GIR1 total thickness is 30nm, other is identical with embodiment 1.

Embodiment 3

[0039] The structure of the red-green doped OLED device is:

[0040] ITO / MoO 3 (60nm) / NPB(40nm) / TCTA(10nm) / CBP:R-4B(6%):GIR1(14%) / BCP(10nm) / Alq3(40nm) / LiF / Al; CBP:R-4B: The total thickness of GIR1 is 30nm, and the others are the same as in Example 1.

[0041] In Example 1, the brightness of the OLED device reaches 34890cd / m 2 (much higher than the existing OLED device), compared with the OLED device in Example 2, the brightness is increased by 20%; the spectral composition detection result of the OLED device is to have a red-green luminescent spectrum, indicating that it is a red-green doped complex OLED devices (see image 3 ); The luminous efficiency reaches 39cd / A.

[0042] In Example 2, the brightness of the OLED device reaches 24000cd / m 2 , compared with the OLED device in Example 3, the brightness increased by 40%; the spectral composition of the OLED device was tested to have a red-green light spectrum (red light is more intense than the green light spectrum); the ...

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Abstract

The invention provides a hybrid lighting white light device. Four LED chips and OLED (organic light emitting diode) devices are disposed on a substrate. An array is serially and parallelly connected with the devices and connected with an anode and a cathode of a power supply through wires. The white light LED chips emit whit light and are machined with the red-green-dye-doped OLED devices to form the hybrid lighting white light device with four wave bands of red, green, blue and yellow. By the hybrid method, the emitted white light is high in color rendering index and efficient, and can be used as more practical backlight source or lighting light source.

Description

technical field [0001] The invention relates to light source color matching, in particular to LED and OLED hybrid lighting devices. Background technique [0002] LED (LightingEmittingDiode) is a light-emitting diode, which is a semiconductor solid-state light-emitting device. It has small size (LED is basically a small chip encapsulated in epoxy resin, so it is very small and very light), low power consumption (LED power consumption is quite low, generally speaking, the work of LED The voltage is 2-3.6V. The working current is 0.02-0.03A. That is to say: it consumes no more than 0.1W of power), long service life (under proper current and voltage, the service life of LED can reach 100,000 hours ), high brightness, low heat (LED uses cold light-emitting technology, the calorific value is much lower than ordinary lighting fixtures), environmental protection (LED is made of non-toxic materials, unlike fluorescent lamps containing mercury that will cause pollution, and LEDs can ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/04F21V23/00
CPCY02B20/30
Inventor 张方辉黄晋孙立蓉张麦丽马颖牟强张微张思璐
Owner 陕西科诺新显器件技术有限公司