Isolation chamber for isolating laser produced plasma extreme ultraviolet light source fragments

Abstract

The invention belongs to the application field of laser technologies, and relates to an isolation chamber for isolating laser produced plasma extreme ultraviolet light source fragments. The isolation chamber comprises a rectifier gate and a chamber body, wherein the chamber body consists of a middle columnar part and two rectangular parts on two sides, wherein the middle columnar part is used for mounting an EUV (extreme ultraviolet) ellipsoidal collecting mirror; rectangular flow channels in the horizontal direction are arranged on two sides of the columnar part; the rectangular parts of the chamber body are connected with the columnar part through a curved line; and the rectifier gate is placed in a gas flow inlet position of the chamber body, and is used for regulating the gas flow distribution on a flowing cross section, and arranging buffer gas flow flowing through the chamber body in order. The rectifier gate comprises a horizontal gate and a vertical gate, wherein the horizontal gate can move vertically to adjust the pressure distribution of the gas flow in the vertical direction. Buffer gas being introduced into the chamber body is a gas mixture of hydrogen and argon. The equipment used by the isolation chamber provided by the invention is simple, and is easy to operate and control. The isolation chamber can effectively isolate the pollution of the plasma fragments on the collecting mirror, and has important meanings on prolonging the service life of an optical system and developing EUV photolithography.

Description

technical field [0001] The invention belongs to the application field of laser technology, and more specifically relates to an isolation cavity for isolating debris of a laser plasma extreme ultraviolet light source. Background technique [0002] From the development of the chip process to the present, reducing the scale that can be engraved by the process as much as possible has always been one of the core themes, and finally produced the extreme ultraviolet lithography (EUVL, Extreme Ultra Violet Lithography). Among them, a very important link is the generation of extreme ultraviolet (EUV, Extreme Ultra Violet) light source. [0003] There are three main methods of generating EUV light sources: laser plasma, gas discharge plasma, and synchrotron radiation light source. Among them, laser plasma (LPP, Laser Produced Plasma) is to bombard the target with laser to generate EUV radiation, and has abundant soft X-rays. Since EUVL is aimed at lithography technology below 22nm, ...

AI Technical Summary

Problems solved by technology

Due to the different injection directions of the two gases and the limitation of the inner cavity structure, the air flow tends to generate a large flow vortex, and there is a possibility that debris will move to the surface of the collecting mirror with the vortex

Images