Junction-free transverse tunneling field effect transistor

Abstract

The invention provides a junction-free transverse tunneling field effect transistor which comprises a source region, a drain region, a channel region, a control grid and an auxiliary grid. The source region, the drain region and the channel region form a whole and are made of the same kind of doping type semiconductor materials. The doping density from the source region to a channel and the drain region is the same. The control grid and the auxiliary grid are placed on the same side of the channel, wherein the control grid is used for controlling switch-on and switch-off of a device, and the auxiliary grid is used for enabling transoid to happen to a semiconductor region below the auxiliary grid. The junction-free transverse tunneling field effect transistor is different from a traditional PN junction tunneling field effect transistor. According to the junction-free transverse tunneling field effect transistor, only one doping type is adopted, a PN junction does not need to be manufactured, and technology difficulty is lowered. The junction-free transverse tunneling field effect transistor is beneficial to diminishing the size of the device, restraining a short-channel effect, enlarging the switching current ratio, and improving the subthreshold slope.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a junctionless lateral tunneling field effect transistor. Background technique [0002] As we all know, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the basic unit of modern electronic components. At present, all transistors have semiconductor junctions, such as PN junctions, heterojunctions, and Schottky junctions. Specifically, the most common homogeneous PN junction is formed by joining a P-type doped region with excess holes and an N-type doped region with excess electrons on the same semiconductor material, heterojunction (Hetero-junction) It is a PN junction composed of two different semiconductor materials, and a Schottky junction is composed of metal and semiconductor contacts. [0003] Typically, a traditional MOSFET device includes a source-channel junction, a drain-channel junction, and a gate stack (including gate dielectric and ga...

AI Technical Summary

Problems solved by technology

However, with the urgent need for ultra-low power devices, the theoretical limit of the subthreshold slope of the junctionless field effect transistor is still 60mV / decade, which limits the reduction of the power supply voltage.

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