Preparation method of indium tin oxide rotary target material

A technology of indium tin oxide and rotating target is applied in the field of preparation of indium tin oxide rotating target, which can solve the problems of difficult control of film deposition thickness uniformity, poor etching target uniformity, and research and development stage, etc., and achieves unique advantages. , Good uniformity, convenient replacement and operation

Active Publication Date: 2013-09-04
GUANGXI CRYSTAL UNION PHOTOELECTRIC MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cuboid, cube and cylinder targets are solid. During the sputtering process, the circular permanent magnet establishes a circular magnetic field on the target surface and forms an etching area on the circular surface with equal distances between the axes. The disadvantage is that the thickness of the film deposition is uniform. The property is not easy to control, the utilization rate of the target is low, only 20% to 30%, and the uniformity of the etching target is poor
The utilization rate of ITO rotating targets can reach more than 80%, and at present, there are few manufacturers at home and abroad that can produce qualified ITO rotating targets, and most of them are in the research and development stage.

Method used

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  • Preparation method of indium tin oxide rotary target material
  • Preparation method of indium tin oxide rotary target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Put the indium tin oxide powder obtained by the chemical co-precipitation method (the mass percentage of tin oxide is 10%, the purity of the indium tin oxide powder is more than 99.99%), put it into a tubular flexible mold, seal it and put it into cold isostatic pressing In the equipment, the cold isostatic pressing is performed at a pressure of 300MPa. After the cold isostatic pressing is completed, the pressure relief and pressure holding operation is performed. During the pressure relief and pressure holding, there are six stages of pressure relief. The second stage releases the pressure to 200MPa and holds the pressure for 1 minute, the third stage releases the pressure to 150 MPa and holds the pressure for 1 minute, the fourth stage releases the pressure to 100MPa and holds the pressure for 1 minute, the fifth stage releases the pressure to 50MPa and holds the pressure for 1 minute, and the sixth stage releases the pressure to 50MPa and holds the pressure for 1 minut...

Embodiment 2

[0022] Put the indium tin oxide powder obtained by the chemical co-precipitation method (the mass percentage of tin oxide is 2%, the purity of the indium tin oxide powder is more than 99.99%), put it into a tubular flexible mold, seal it and put it into cold isostatic pressing In the equipment, the cold isostatic pressing is performed at a pressure of 200MPa. After the cold isostatic pressing is completed, the pressure relief operation is performed. During the pressure relief, there are four stages of pressure relief. Keep the pressure at 90MPa for 1 minute, release the pressure at the third stage to 65 MPa and hold the pressure for 1 minute, release the pressure at the fourth stage to 40MPa and hold the pressure for 1 minute, and finally return to normal pressure, and take out the formed green body. Then put the indium tin oxide tubular green body into the degreasing furnace, raise the temperature to 500°C at a rate of 0.2°C / min, keep it warm for 2 hours, and then drop it to r...

Embodiment 3

[0024] Put the indium tin oxide powder obtained by the chemical co-precipitation method (the mass percentage of tin oxide is 5%, the purity of the indium tin oxide powder is more than 99.99%), put it into a tubular flexible mold, seal it and put it into cold isostatic pressing In the equipment, the cold isostatic pressing is performed at a pressure of 250MPa. After the cold isostatic pressing is completed, the pressure relief and pressure maintenance operation is performed. During the pressure relief and pressure maintenance, there are five stages of pressure relief. The second stage releases the pressure to 140 MPa and holds the pressure for 6 minutes, the third stage releases the pressure to 90 MPa and holds the pressure for 3 minutes, the fourth stage releases the pressure to 50 MPa and holds the pressure for 2 minutes, the fifth stage releases the pressure to 25 MPa and holds the pressure for 1 minute, and finally to normal pressure, and take out the molded biscuit. Then p...

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Abstract

The invention relates to a preparation method of an indium tin oxide rotary target material. The preparation method comprises the following steps of filling indium tin oxide powder obtained by a chemical coprecipitation method into a tube-shaped flexible mold, carrying out cold isostatic pressing molding under the pressure of 200 to 400MPa, then reducing the pressure to ordinary pressure so that a indium tin oxide tube-shaped blank is obtained, carrying out degreasing of the indium tin oxide tube-shaped blank in a degreasing furnace, putting the degreased blank into a pressure sintering furnace, and carrying out pressure sintering under the oxygen pressure according to a certain sintering condition to obtain the indium tin oxide rotary target material having relative density more than 99%. The indium tin oxide rotary target material has the advantages that in sputtering, the indium tin oxide rotary target material can rotate around a fixed bar-shaped magnet assembly so that 360 degrees of the target surface can be uniformly etched; and sputtered atoms can flight along all directions so that good uniformity is realized, a sputtering area is increased, replacement is convenient, production efficiency is high and a target material utilization rate is more than 80%.

Description

technical field [0001] The invention relates to a method for preparing an indium tin oxide rotating target. Background technique [0002] ITO film has the dual advantages of transparency and conductivity, and is one of the basic materials in many industries. Therefore, it is widely used in solar cells, liquid crystal displays and plasma displays. It is excellent in LCD, anti-frost, anti-fog, anti-infrared heat insulation surface essential material. In recent years, with the rapid development of high-end display devices, the demand for ITO thin films has also increased sharply. At present, planar ITO targets are widely used in the industry for coating, and the shapes of planar ITO targets include cuboids, cubes, cylinders and irregular shapes. The cuboid, cube and cylinder targets are solid. During the sputtering process, the circular permanent magnet establishes a circular magnetic field on the target surface and forms an etching area on the circular surface with equal dis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/622C04B35/457
Inventor 黄誓成何建进陆映东
Owner GUANGXI CRYSTAL UNION PHOTOELECTRIC MATERIALS CO LTD
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