Preparation method of indium tin oxide rotary target material

The technology of indium tin oxide and rotating target is applied in the field of preparation of indium tin oxide rotating target material, which can solve the problems of difficult control of film deposition thickness uniformity, poor etching target material uniformity, low target material utilization rate, etc., and achieves unique Superiority, good uniformity and high target utilization

Active Publication Date: 2014-09-03
GUANGXI CRYSTAL UNION PHOTOELECTRIC MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cuboid, cube and cylinder targets are solid. During the sputtering process, the circular permanent magnet establishes a circular magnetic field on the target surface and forms an etching area on the circular surface with equal distances between the axes. The disadvantage is that the thickness of the film deposition is uniform. The property is not easy to control, the utilization rate of the target is low, only 20% to 30%, and the uniformity of the etching target is poor
The utilization rate of ITO rotating targets can reach more than 80%, and at present, there are few manufacturers at home and abroad that can produce qualified ITO rotating targets, and most of them are in the research and development stage.

Method used

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  • Preparation method of indium tin oxide rotary target material
  • Preparation method of indium tin oxide rotary target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Put the indium tin oxide powder obtained by the chemical co-precipitation method (the mass percentage of tin oxide is 10%, the purity of the indium tin oxide powder is more than 99.99%), put it into a tubular flexible mold, seal it and put it into cold isostatic pressing In the equipment, the cold isostatic pressing is performed at a pressure of 300MPa. After the cold isostatic pressing is completed, the pressure relief and pressure holding operation is performed. During the pressure relief and pressure holding, there are six stages of pressure relief. The second stage releases the pressure to 200MPa and holds the pressure for 1 minute, the third stage releases the pressure to 150MPa and holds the pressure for 1 minute, the fourth stage releases the pressure to 100MPa and holds the pressure for 1 minute, the fifth stage releases the pressure to 50MPa and holds the pressure for 1 minute, the sixth stage Release the pressure to 25MPa and keep the pressure for 1 minute, and...

Embodiment 2

[0022] Put the indium tin oxide powder obtained by the chemical co-precipitation method (the mass percentage of tin oxide is 2%, the purity of the indium tin oxide powder is more than 99.99%), put it into a tubular flexible mold, seal it and put it into cold isostatic pressing In the equipment, the cold isostatic pressing is performed at a pressure of 200MPa. After the cold isostatic pressing is completed, the pressure relief operation is performed. During the pressure relief, there are four stages of pressure relief. Keep the pressure at 90MPa for 1 minute, release the pressure at the third stage to 65MPa and hold the pressure for 1 minute, release the pressure at the fourth stage to 40MPa and hold the pressure for 1 minute, and finally return to normal pressure, and take out the formed green body. Then put the indium tin oxide tubular green body into the degreasing furnace, raise the temperature to 500°C at a rate of 0.2°C / min, keep it warm for 2 hours, and then drop it to ro...

Embodiment 3

[0024] Put the indium tin oxide powder obtained by the chemical co-precipitation method (the mass percentage of tin oxide is 5%, the purity of the indium tin oxide powder is more than 99.99%), put it into a tubular flexible mold, seal it and put it into cold isostatic pressing In the equipment, the cold isostatic pressing is performed at a pressure of 250MPa. After the cold isostatic pressing is completed, the pressure relief and pressure maintenance operation is performed. During the pressure relief and pressure maintenance, there are five stages of pressure relief. The second stage releases the pressure to 140MPa and holds the pressure for 6 minutes, the third stage releases the pressure to 90MPa and holds the pressure for 3 minutes, the fourth stage releases the pressure to 50MPa and holds the pressure for 2 minutes, the fifth stage releases the pressure to 25MPa and holds the pressure for 1 minute, and finally returns to normal Press, and take out the formed biscuit. Then ...

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Abstract

The invention relates to a method for preparing an indium tin oxide rotating target, which comprises the following steps: loading indium tin oxide powder obtained by a chemical co-precipitation method into a tubular flexible mold, performing cold isostatic pressing at a pressure of 200-400 MPa, and cold etc. After the static pressure is over, the pressure is released to normal pressure to obtain the indium tin oxide tubular green body, and then the indium tin oxide tubular green body is degreased in the degreasing furnace, and then the degreased green body is put into the pressure sintering furnace, and pressed Under certain sintering conditions, pressure sintering is carried out under oxygen pressure to obtain an indium tin oxide rotating target with a relative density above 99%. The indium tin oxide tubular rotating target prepared by the present invention has the advantage that the target can rotate around the fixed strip magnet assembly during the sputtering process, so that the 360° target surface can be uniformly etched, and the sputtered atoms can be sputtered to each Directional flight, good uniformity, large sputtering area, easy replacement operation, high production efficiency, and high target utilization (>80%).

Description

technical field [0001] The invention relates to a method for preparing an indium tin oxide rotating target. Background technique [0002] ITO film has the dual advantages of transparency and conductivity, and is one of the basic materials in many industries. Therefore, it is widely used in solar cells, liquid crystal displays and plasma displays. It is excellent in LCD, anti-frost, anti-fog, anti-infrared heat insulation surface essential material. In recent years, with the rapid development of high-end display devices, the demand for ITO thin films has also increased sharply. At present, planar ITO targets are widely used in the industry for coating, and the shapes of planar ITO targets include cuboids, cubes, cylinders and irregular shapes. The cuboid, cube and cylinder targets are solid. During the sputtering process, the circular permanent magnet establishes a circular magnetic field on the target surface and forms an etching area on the circular surface with equal dis...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/622C04B35/457
Inventor 黄誓成何建进陆映东
Owner GUANGXI CRYSTAL UNION PHOTOELECTRIC MATERIALS CO LTD
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