Metallic oxide thin film transistor and manufacturing method thereof

Abstract

The invention discloses a metallic oxide thin film transistor and a manufacturing method of the metallic oxide thin film transistor. The metallic oxide thin film transistor comprises a substrate, a grid electrode, a grid electrode insulating layer, a metal semiconductor oxide layer, a source electrode / drain electrode conducting layer and an interlayer insulating layer, wherein the grid electrode, the grid electrode insulating layer, the metal semiconductor oxide layer, the source electrode / drain electrode conducting layer and the interlayer insulating layer are arranged in sequence far away from the substrate. The interlayer insulating layer is filled into a clearance between the source electrode conducting layer and the drain electrode conducting layer to from a channel layer. A positive electrode conducting layer and an upper conducting grid electrode are formed on the upper surface of the interlayer insulating layer. The upper grid electrode completely covers the channel layer, and the luminous reflectance of the materials of the upper grid electrode is larger than 85%. Due to the fact that the upper grid electrode with the luminous reflectance larger than 85% is arranged, external light rays can be effectively blocked, the situation that the external light rays affect the performance of the transistor is avoided, and the threshold voltage of the transistor is made to be maintained in a stable state. Due to the fact that conducting materials are adopted by the metallic oxide thin film transistor and can be used as grid electrodes, a double-grid structure is formed, and the double-grid structure enables the migration speed of the charge carrier of the transistor to be effectively improved.

Description

technical field [0001] The invention relates to a semiconductor structure and a preparation method thereof, in particular to a structure of a metal oxide thin film transistor and a preparation method thereof, and belongs to the technical field of semiconductor applications. Background technique [0002] Metal oxide thin film transistors have many excellent properties, such as greater mobility, better uniformity of large size, and lower process temperature, etc., and their application range is becoming wider and wider. [0003] Metal oxide thin film transistors are classified into two types, bottom gate type and top gate type. The cross-section of the top gate metal oxide thin film transistor is as follows figure 1 As shown, it includes the substrate, and the gate, gate insulating layer, metal oxide semiconductor layer, source / drain conductive layer, interlayer insulating layer and anode conductive layer arranged in sequence along the direction away from the substrate, where...

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Problems solved by technology

However, when the light energy is large, the light energy will still penetrate the protective layer and affect the back channel region, which will still affect the performance of metal oxide semiconductors.

[0006] The second is to use an opaque metal layer or multi-layer material as a light-shielding layer to cover the semiconductor channel area to prevent the impact of light on the stability of the semiconductor device: if you want to add a light-shielding layer, you need to make it through an additional mask; this is undoubtedly It will increase the cost and the difficulty of the preparation process; or directly use the cathode of the OLED device as a light-shielding layer, because the cathode of the OLED device is generally made of an opaque metal material, and this method is only applicable to the bottom-emitting device mode, so In other words, the light emitted by the OLED device is reflected by the cathode and then passes through the layers of the OLED device and the layer structure of the metal oxide semiconductor, which undoubtedly greatly reduces the aperture ratio of the device.

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