Metallic oxide thin film transistor and manufacturing method thereof

An oxide thin film and oxide semiconductor technology, applied in transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as increasing cost and difficulty of preparation process, reducing device aperture ratio, and affecting the performance of metal oxide semiconductors. , to achieve better display effect, large source-drain current, and improved carrier mobility.

CN103296090AActive Publication Date: 2013-09-11CHENGDU VISTAR OPTEOLECTRONICS CO LTD

4 Cites 11 Cited by

Patent Information

Authority / Receiving Office: CN · China
Patent Type: Applications(China)
Current Assignee / Owner: CHENGDU VISTAR OPTEOLECTRONICS CO LTD
Publication Date: 2013-09-11

Smart Images

Figure 1
Figure 2
Figure 3

Patent Text Reader

Abstract

The invention discloses a metallic oxide thin film transistor and a manufacturing method of the metallic oxide thin film transistor. The metallic oxide thin film transistor comprises a substrate, a grid electrode, a grid electrode insulating layer, a metal semiconductor oxide layer, a source electrode / drain electrode conducting layer and an interlayer insulating layer, wherein the grid electrode, the grid electrode insulating layer, the metal semiconductor oxide layer, the source electrode / drain electrode conducting layer and the interlayer insulating layer are arranged in sequence far away from the substrate. The interlayer insulating layer is filled into a clearance between the source electrode conducting layer and the drain electrode conducting layer to from a channel layer. A positive electrode conducting layer and an upper conducting grid electrode are formed on the upper surface of the interlayer insulating layer. The upper grid electrode completely covers the channel layer, and the luminous reflectance of the materials of the upper grid electrode is larger than 85%. Due to the fact that the upper grid electrode with the luminous reflectance larger than 85% is arranged, external light rays can be effectively blocked, the situation that the external light rays affect the performance of the transistor is avoided, and the threshold voltage of the transistor is made to be maintained in a stable state. Due to the fact that conducting materials are adopted by the metallic oxide thin film transistor and can be used as grid electrodes, a double-grid structure is formed, and the double-grid structure enables the migration speed of the charge carrier of the transistor to be effectively improved.

Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a semiconductor structure and a preparation method thereof, in particular to a structure of a metal oxide thin film transistor and a preparation method thereof, and belongs to the technical field of semiconductor applications. Background technique

[0002] Metal oxide thin film transistors have many excellent properties, such as greater mobility, better uniformity of large size, and lower process temperature, etc., and their application range is becoming wider and wider.

[0003] Metal oxide thin film transistors are classified into two types, bottom gate type and top gate type. The cross-section of the top gate metal oxide thin film transistor is as follows figure 1 As shown, it includes the substrate, and the gate, gate insulating layer, metal oxide semiconductor layer, source / drain conductive layer, interlayer insulating layer and anode conductive layer arranged in sequence along the direction away from the substrate, where...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine

Login to View More