Doping method of PN structure
A technology of doping ions and solutions, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of reducing the conversion efficiency of solar cells, and achieve the effect of reducing metal pollution requirements, lowering requirements, and low cost
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Embodiment 1
[0045] refer to figure 1and figure 2 , the doping method of the PN structure comprises the following steps:
[0046] Step S 1 , implanting dopant ions into the surface of a substrate 1 by means of ion implantation to obtain a PN structure. In this embodiment, boron ions are accelerated to 500 eV and implanted into the surface of the substrate 1 to form a P-type doped layer 2 . However, due to multiple uses, various components in the ion implanter for ion implantation are contaminated with various doping impurities, and these doping impurities are sputtered to the back of the substrate 1, and then figure 2 The dopant impurity accidentally sputtered onto the backside of the substrate 1 during the boron ion implantation process is denoted by reference numeral 3 . figure 2 It is just an example, and it does not mean that dopant impurities will be sputtered onto the substrate 1 every ion implantation, nor is the position where the dopant impurities will be sputtered limited....
Embodiment 2
[0050] The principle of embodiment 2 is the same as embodiment 1, and its main steps are also the same, the difference is:
[0051] In this embodiment, the volume ratio of the ammonium hydroxide solution, the hydrogen peroxide and deionized water in the first washing liquid is 1:2:10, and the concentration of the ammonium hydroxide solution is 32%, and the concentration of the hydrogen peroxide is also is 32%, and the resistivity of deionized water is 16MΩ, where the percentage symbol represents the mass percentage. The PN structure was placed in the first washing liquid and washed at a temperature of 80° C. for 1 minute to remove the dopant impurity 3 . After cleaning by the first cleaning solution, the 3nm thick silicon layer on the back side of the substrate (silicon wafer) is removed without affecting the semiconductor performance of the PN structure.
[0052] All the other unmentioned parts are the same as in Example 1.
Embodiment 3
[0054] The principle of embodiment 3 is the same as that of embodiment 1, and its main steps are also the same, the difference being:
[0055] In this embodiment, the volume ratio of the ammonium hydroxide solution, the hydrogen peroxide and deionized water in the first washing liquid is 1:1:3, and the concentration of the ammonium hydroxide solution is 30%, and the concentration of the hydrogen peroxide is 31%, and the resistivity of deionized water is 17MΩ, where the percent symbol represents the mass percent. The PN structure was placed in the first washing liquid and washed at a temperature of 60° C. for 8 minutes to remove the dopant impurity 3 . After cleaning by the first cleaning solution, the silicon layer with a thickness of 2.5 nm on the back side of the substrate (silicon wafer) is removed, but the performance of the PN structure semiconductor is not affected.
[0056] All the other unmentioned parts are the same as in Example 1.
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