Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flexible thin film thermobattery and manufacturing method thereof

A thermoelectric battery and flexible film technology, applied in the manufacture/processing of thermoelectric devices, thermoelectric devices that only use the Peltier or Seebeck effect, etc., can solve the problems of high cost, low performance, low output power, etc., to reduce manufacturing costs, Lightweight, flexible effects

Active Publication Date: 2013-09-25
SHENZHEN UNIV
View PDF6 Cites 24 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the deficiencies in the manufacturing technology of the above-mentioned thermoelectric battery, the purpose of the present invention is to provide a flexible thin-film thermoelectric battery and its manufacturing method, aiming at solving the problems of low output power, high cost, and low performance of the current thin-film thermoelectric battery under medium and low temperature conditions.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flexible thin film thermobattery and manufacturing method thereof
  • Flexible thin film thermobattery and manufacturing method thereof
  • Flexible thin film thermobattery and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] An ultra-high vacuum ion beam sputtering coating machine is used to prepare P-type and N-type thermoelectric thin film layers on the first and second flexible insulating substrates. The thermoelectric type is selected as P-type and N-type Sb 2 Te 3 and Bi 2 Te 3 The semiconductor compound is in the form of a composite target, and the Sb / Te and Bi / Te composite targets are respectively fixed on the target positions of the rotatable selective sputtering target. Choose flexible PI made of high-temperature polyimide as the first and second flexible insulating substrates, with a thickness of 0.15 mm, use alcohol and acetone to ultrasonically clean the first and second flexible insulating substrates, and then put them in the coating chamber on the fixture; respectively plate Sb on the first and second flexible insulating substrates 2 Te 3 and Bi 2 Te 3 Thin film layer with a thickness of 1 μm; then, by masking, on the thermoelectric film that has been plated, a metal co...

Embodiment 2

[0039] A multi-target magnetron sputtering sputtering coater is used to coat P-type and N-type thermoelectric thin films on the first and second flexible insulating substrates respectively. The thermoelectric type is selected as P-type and N-type Sb 2 Te 3 and Bi 2 Te 3 The semiconductor compound is in the form of magnetron co-sputtering. Sb and Bi high-purity targets are respectively placed on the DC sputtering target position of the multi-target magnetron sputtering coating machine, and Te is installed on the radio frequency target position. Choose flexible PI made of high-temperature polyimide as the insulating substrate, with a thickness of 0.15mm, use alcohol and acetone to ultrasonically clean the substrate, and then put it on the fixture in the coating chamber; Sb was plated on the substrate by magnetron co-sputtering technology 2 Te 3 and Bi 2 Te 3 Thin film layer with a thickness of 1 μm, and then by masking, on one end of the thermoelectric film that has been ...

Embodiment 3

[0042] An ultra-high vacuum ion beam sputtering coating machine is used to prepare P-type and N-type thermoelectric thin film layers on the first and second flexible insulating substrates. The thermoelectric type is selected as P-type and N-type Sb 2 Te 3 and Bi 2 Te 3 The semiconductor compound is in the form of a composite target, and the Sb / Te and Bi / Te composite targets are respectively fixed on the target positions of the rotatable selective sputtering target. Choose flexible PI made of high-temperature polyimide as the first and second flexible insulating substrates, with a thickness of 0.15 mm, use alcohol and acetone to ultrasonically clean the first and second flexible insulating substrates, and then put them in the coating chamber On the fixture; Sb is plated on the first and second flexible insulating substrates respectively 2 Te 3 and Bi 2 Te 3 Thin film layer with a thickness of 1 μm; then, by masking, on the thermoelectric film that has been plated, a meta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a flexible thin film thermobattery and a manufacturing method thereof. The manufacturing method includes the steps that a first flexible insulating substrate and a second flexible insulating substrate are washed first, then a P-type thermoelectricity thin film and an N-type thermoelectricity thin film are plated on the first flexible insulating substrate and the second flexible insulating substrate respectively, metal conductive thin film layers which are used for extracting electrodes are plated at one end of the P-type thermoelectricity thin film and one end of the N-type thermoelectricity thin film, and PN junction thin film layers which are used for achieving mutual connection are plated on the side face of the other end of the first flexible insulating substrate and the side face of the other end of the second flexible insulating substrate. The manufacturing method of the flexible thin film thermobattery is simple, free of being limited by the manufacturing process of a traditional thermoelectric device, low in cost and capable of being produced in a large area. The manufactured flexible thin film thermobattery can provide high enough voltages and currents in a small temperature difference, effectively lower material heat conductivity and improve thermoelectric conversion efficiency. The battery self is capable of being bent, strong in plasticity and flexible in using, and flexible thin film thermobatteries with a certain thickness and a certain area for different needs can be manufactured according to selected materials of the flexible substrates.

Description

technical field [0001] The invention relates to the technical field of thermoelectric batteries, in particular to a flexible film thermoelectric battery and a manufacturing method thereof. Background technique [0002] The extensive use of conventional fossil energy in the world today has caused an increasingly severe energy crisis and climate warming. It is urgent to actively promote and promote the use of clean and renewable energy. The thermoelectric battery is a green and environmentally friendly energy source with a wide range of applications. It uses the thermoelectric effect of thermoelectric materials to directly couple and convert heat and electricity to each other to achieve power generation. It has no noise, no harmful substance emissions, high reliability, and long life. A series of advantages, it has an irreplaceable role in waste heat waste heat power generation and mobile distributed heat source utilization. However, based on the characteristics of thermoelec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L35/32H01L35/34
Inventor 范平郑壮豪梁广兴陈天宝蔡兆坤张东平罗景庭
Owner SHENZHEN UNIV
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com