Novel metal diffusion bonding technology

Abstract

The invention discloses a novel metal diffusion bonding technology. Main steps comprises steps that: two parts on which a bonding metal layer is deposited are packaged in a vacuum sealing soft bag, the vacuum sealing soft bag is then put in a container filled with liquid, the container is connected with a pressure device, pressure generated by the pressure device is exerted on a part needing bonding through the liquid in the container and the vacuum sealing soft bag, temperature rising is further realized simultaneously, so metal diffusion bonding is realized under effects of the temperature and the pressure. The novel metal diffusion bonding technology can guarantee uniform bonding pressure in each direction and does not easily cause rupture damage to a crimping material even under high pressure intensity, so a bonding effect is improved. The exerted pressure is great, so reliable bonding can further be realized even under lower temperature, lowest work temperature can be 80 DEG C, moreover, the novel metal diffusion bonding technology can reduce requirements for technology clamps and physical dimensions of bonding materials.

Description

technical field [0001] The invention relates to a metal diffusion bonding process, which can be applied to semiconductor, surface acoustic wave device packaging wafer bonding and acousto-optic device transducer and acousto-optic medium bonding to realize reliable metal diffusion bonding. [0002] Background technique [0003] Metal diffusion bonding is a type of thermocompression bonding. First, metal materials with high diffusivity such as gold, copper or aluminum are deposited on the wafers and bulks to be bonded, and then the bulks and wafers or wafers to be bonded are bonded together under heat and pressure . Diffusion is the result of metal atoms mixing with each other, resulting in extremely high bonding strength and enabling hermetic packaging. The currently used metal bonding process is: applying mechanical pressure at a high temperature of 300-500° C., and the mechanical pressure is unidirectional. [0004] The bonding principle of the acousto-optic device trans...

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Problems solved by technology

[0006] At present, metal diffusion bonding generally adopts mechanical pressure method, which has the following disadvantages: 1) The requirements for bonding fixtures are very high, and corresponding bonding fixtures must be designed for different sizes of bonding materials; 2) For some brittle acoustic materials For optical media materials, the pressure should not be too high, otherwise it will easily cause damage to the acousto-optic media; 3) The acousto-optic media block, transducer chip and wafer are required to have good flatness (TTV) and warpage (Wrap) and surface roughness (Ra), that is, there are higher requirements for the physical size of the device itself

[0007] In addition, for the case where the bonding material cannot withstand high temperature, or the bonding material has a difference in thermal expansion coefficient, only low temperature bonding can be used at this time, but in order to ensure effective bonding at low temperature, it is often necessary to increase the bonding pressure. The increase in pressure can easily cause damage to the device

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