Metal oxide thin film transistor array substrate and manufacturing method thereof

Abstract

The invention provides a metal oxide thin film transistor array substrate and a manufacturing method thereof. The array substrate comprises scanning lines, data lines, and a plurality of pixel units defined by the former two, wherein each pixel unit comprises a thin film transistor, an active layer, and a pixel electrode, and the active layer is made of metal oxide; pixel electrodes, source electrodes and drain electrodes are all formed in the way that metal oxides have the conductive character through ionic injection. According to the invention, based on the character that the metal oxide is a suitable substitute of ITO and a-Si, the array substrate manufacture through four photomask processing procedures is provided, which simplifies processing procedures and reduces the manufacturing cost; a semi-conductor layer and a transparency electrode layer are combined together, an intermediate tone mask plate or a gray tone mask plate is adopted to manufacture a channel protective layer and a metal oxide layer through one procedure, and other metal oxides are changed into transparency electrodes with conductor characteristic through ionic injection, so that the array substrate can be completed through four photomask processing procedures.

Description

technical field [0001] The invention relates to a metal oxide thin film transistor array substrate and a manufacturing method thereof. Background technique [0002] In recent years, with the continuous increase of the size of the liquid crystal display and the continuous increase of the frequency of the driving circuit, it is difficult for the mobility of the existing amorphous silicon thin film transistors to meet the requirements. High-mobility thin film transistors are polysilicon thin film transistors and metal oxide thin film transistors. Although polysilicon thin film transistors have been studied earlier, their uniformity is poor and the manufacturing process is complicated. Compared with polysilicon thin film transistors, the advantages of metal oxide thin film transistors are: There is no need to use crystallization technology, which saves process steps and improves uniformity and pass rate; the process is simple, and traditional sputtering and wet etching processes...

AI Technical Summary

Problems solved by technology

[0002] In recent years, with the continuous increase of the size of liquid crystal display and the continuous increase of the frequency of the driving circuit, the mobility of the existing amorphous silicon thin film transistors is difficult to meet the requirements.

High-mobility thin film transistors are polysilicon thin film transistors and metal oxide thin film transistors. Although polysilicon thin film transistors have been studied earlier, their uniformity is poor and the manufacturing process is complicated. Compared with polysilicon thin film transistors, the advantages of metal oxide thin film transistors are: There is no need to use crystallization technology, which saves process steps and improves uniformity and pass rate; the process is simple, and traditional sputtering and wet etching processes can be used; in addition, the current laser crystallization technology is still not up to the requirements of large-size panels. Requirements, while oxide transistors do not require laser crystallization, so there is no size limit

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