Gas sensor based on mesoporous indium oxide gas-sensitive material and preparation method

A technology of gas sensor and gas-sensitive material, which is applied in the field of gas sensor with high gas-sensitivity performance, and can solve problems such as incompatibility with high gas-sensitivity and high selectivity

Inactive Publication Date: 2013-10-16
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the problem that existing indium oxide gas sensors are difficult to be compatible with

Method used

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  • Gas sensor based on mesoporous indium oxide gas-sensitive material and preparation method
  • Gas sensor based on mesoporous indium oxide gas-sensitive material and preparation method
  • Gas sensor based on mesoporous indium oxide gas-sensitive material and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Example 1: Using ordered mesoporous silicon oxide SBA-15 as a hard template, the mass ratio of it to the precursor of indium nitrate pentahydrate is 100, and the room temperature ethanol impregnation method makes the indium precursor immersed in the silicon oxide mesoporous channel, and then The ethanol solvent was evaporated, and the obtained calcined mixture was loaded into a crucible with a ratio of the opening area of ​​the container to the sample volume of the calcined mixture of 10-6 for calcination, the calcination temperature was 200°C, and the holding time was 20h. Then, the silicon oxide template is removed by centrifugation after stirring with sodium hydroxide solution, and an ordered mesoporous indium oxide material is obtained.

[0019] like figure 1 A schematic diagram of the fabricated sensor and its sensing layer is shown in . Prepare a mesoporous indium oxide coating slurry with a concentration of 0.1g / mL, and use a paint pen to evenly coat the slurry ...

Embodiment 2

[0020] Example 2: Using ordered mesoporous silicon oxide MCM-41 as a hard template, the mass ratio of it to the precursor of indium nitrate pentahydrate is 10, and the indium precursor is immersed in the silicon oxide mesoporous channel by the room temperature ethanol impregnation method, and then The ethanol solvent was evaporated, and the obtained calcined mixture was loaded into a crucible with a ratio of the opening area of ​​the container to the sample volume of the calcined mixture to be calcined at 400° C. for 5 hours. Then, the silicon oxide template is removed by centrifugation after stirring with sodium hydroxide solution, and an ordered mesoporous indium oxide material is obtained.

[0021] Prepare the mesoporous indium oxide coating slurry with a concentration of 0.2g / mL, and use a paint pen to evenly coat the slurry on the outer surface of the ceramic core with gold electrodes to form an indium oxide sensing layer with a thickness of 300um. After the coating is co...

Embodiment 3

[0022] Example 3: Using ordered mesoporous silicon oxide KIT-6 as a hard template, the mass ratio of it to the precursor of indium nitrate pentahydrate is 0.1, and the indium precursor is immersed in the silicon oxide mesoporous channel by the room temperature ethanol impregnation method, and then Evaporate ethanol solvent, and the calcined mixture that obtains is packed into the ratio of container opening area and calcined mixture sample amount is 10 -4 Calcined in a crucible, the calcination temperature is 800 ℃, and the holding time is 0.2h. Then, the silicon oxide template is removed by centrifugation after stirring with sodium hydroxide solution, and an ordered mesoporous indium oxide material is obtained.

[0023] Prepare a mesoporous indium oxide coating slurry with a concentration of 0.02g / mL, and use a paint pen to evenly coat the slurry on the outer surface of a ceramic tube core with a gold electrode to form an indium oxide sensing layer with a thickness of 500nm. ...

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Abstract

The invention relates to a gas sensor based on a mesoporous indium oxide gas-sensitive material and a preparation method. The mesoporous indium oxide gas-sensitive material is used as a sensing layer of the sensor. According to the invention, mesoporous indium oxide prepared by using a nanometer casting method is used as the gas-sensitive material, the concentration of prepared coating slurry is 0.02 to 0.2 g/mL, and the thickness of the sensing layer of the gas sensor prepared through coating is 500 nm to 300 mu m. The preparation method for the gas sensor is simple to operate and easy to realize; the gas sensor has a large gas-sensitive specific surface area, greater than 150 m<2>/g; the preparation method is favorable for improving gas-sensitive performance of the prepared gas sensor, and the prepared gas sensor has optimal ethanol sensing performance of greater than 18, optimal acetone sensing performance of greater than 15 and optimal methanol sensing performance of greater than 12, all higher than the performance of frequently used industrial gas sensors.

Description

technical field [0001] The invention belongs to the application field of inorganic porous materials. More specifically, it relates to a method for preparing a porous indium oxide gas-sensing material by reverse replication of a nano-casting method and applying it to a gas sensor with high gas-sensing performance. Background technique [0002] Gas sensors based on metal oxide semiconductors are widely used in the fields of domestic and industrial gas sensing due to their advantages of low price, good gas sensitivity, easy assembly, and small size. In order to further improve its gas sensing performance, the design of nanostructures of gas-sensing materials has become an important direction of development, including zero-dimensional nanoparticle gas-sensing materials, one-dimensional nanowire rods and other materials, two-dimensional nanosheets and other structures, and three-dimensional nanostructures. Material. Among them, the preparation of three-dimensional mesoporous na...

Claims

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Application Information

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IPC IPC(8): G01N27/00
Inventor 孙晓红郑春明
Owner TIANJIN UNIV
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