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Metamaterial substrate and preparation method thereof

A technology of metamaterials and substrates, applied in the field of metamaterials, can solve problems such as not being able to be used at high temperatures, and achieve the effects of low dielectric constant, small thermal expansion coefficient, and low dielectric loss

Inactive Publication Date: 2013-10-23
KUANG CHI INNOVATIVE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a metamaterial substrate with low dielectric constant and small dielectric loss for the defect that the existing metamaterial that uses PCB substrate as the metamaterial substrate cannot be used at high temperature , small thermal expansion coefficient, high temperature resistance, excellent thermal conductivity, etc.

Method used

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  • Metamaterial substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Based on P 2 o 5 , ZnO, NaF, B 2 o 3 The total number of moles, the P 2 o 5 25%, ZnO 45%, NaF 20%, B 2 o 3 Mix 10% ingredients, add ethanol for ball milling for 2 hours, dry, put into a corundum crucible, heat to 1400°C in a high-temperature electric furnace, and keep warm for two hours to clarify and homogenize the glass melt; pour the glass melt into water to quench After cooling, add ethanol and ball mill for 4 hours, dry and pass through a 200-mesh sieve to prepare glass powder; based on the total mass number of glass powder and silicon nitride powder, mix the glass powder with silicon nitride powder at 10wt% , add ethanol and wet mill for 8 hours, dry, pass through a 60-mesh sieve, and prepare a pre-sintered body; prepare the pre-sintered body into a flat material of the required shape and size by hot pressing and sintering, and the process parameters are: the highest sintering temperature is 1500 ℃, 30MPa, heat preservation for 1h; brush copper on one sur...

Embodiment 2

[0028] Based on P 2 o 5 , ZnO, NaF, B 2 o 3 The total number of moles, the P 2 o 5 35%, ZnO 35%, NaF 25%, B 3 o 3 Mix 5% ingredients, add ethanol for ball milling for 2 hours, dry, put into a corundum crucible, heat to 1400°C in a high-temperature electric furnace, and keep it warm for two hours to clarify and homogenize the glass melt; pour the glass melt into water to quench After cooling, add ethanol and ball mill for 4 hours, dry and pass through a 200-mesh sieve to prepare glass powder; based on the total mass number of glass powder and silicon nitride powder, mix the glass powder with silicon nitride powder at 15wt% , add ethanol and wet mill for 8 hours, dry, pass through a 60-mesh sieve, and prepare a pre-sintered body; prepare the pre-sintered body into a flat material of the required shape and size by hot pressing and sintering, and the process parameters are: the highest sintering temperature is 1500 ℃, 30MPa, heat preservation for 1h; brush copper on one s...

Embodiment 3

[0031] Based on P 2 o 5 , ZnO, NaF, B 2 o 3 The total number of moles, the P 2 o 5 30%, ZnO 40%, NaF 22%, B 2 o 3 Mix 8% ingredients, add ethanol for ball milling for 2 hours, dry, put into a corundum crucible, heat to 1400°C in a high-temperature electric furnace, and keep it warm for two hours to clarify and homogenize the glass melt; pour the glass melt into water to quench After cooling, add ethanol and ball mill for 4 hours, dry and pass through a 200-mesh sieve to prepare glass powder; based on the total mass number of glass powder and silicon nitride powder, mix the glass powder with silicon nitride powder at 15wt% , add ethanol and wet mill for 8 hours, dry, pass through a 60-mesh sieve, and prepare a pre-sintered body; prepare the pre-sintered body into a flat material of the required shape and size by hot pressing and sintering, and the process parameters are: the highest sintering temperature is 1500 ℃, 30MPa, heat preservation for 1h; brush copper on one s...

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Abstract

The invention discloses a metamaterial substrate which comprises a flat-sheet material and a reflecting layer on the surface thereof. The invention also discloses a preparation method of a metamaterial, which comprises the following steps: mixing P2O5, ZnO, NaF and B2O3, thus preparing glass powder; mixing silicon nitride powder and the glass powder, thus preparing a presintering body; performing hot pressed sintering on the presintering body to obtain the flat-sheet material; and firing a metal slurry layer on the surface of the flat-sheet material, thus preparing the metamaterial substrate. The metamaterial substrate prepared by the invention has the advantages of low dielectric constant, low dielectric loss, low thermal expansion coefficient, high temperature resistance, favorable heat-conducting property and the like; and when the metamaterial substrate is prepared into the metamaterial, the metamaterial can be used at high temperature.

Description

technical field [0001] The invention relates to the field of metamaterials, more specifically, to a metamaterial substrate and a preparation method thereof. Background technique [0002] Silicon nitride glass ceramics have the advantages of low dielectric constant, small dielectric loss, small thermal expansion coefficient, high temperature resistance, excellent thermal conductivity, etc., and its strength can be maintained at high temperature without falling. It is an ideal material for preparing high temperature resistant substrates. [0003] Metamaterials refer to some artificial composite structures or composite materials with extraordinary physical properties that natural materials do not have. Through the orderly design of the structure on the key physical scale of the material, the limitation of some apparent natural laws can be broken through, so as to obtain the supernormal material function beyond the ordinary nature inherent in nature. The properties and function...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/584C04B35/622C04B35/645C04B41/88
Inventor 刘若鹏季春霖李雪
Owner KUANG CHI INNOVATIVE TECH