An Improved Diffusion Furnace Exhaust Gas Emission Device

A technology of tail gas emission and diffusion furnace, applied in the directions of diffusion/doping, crystal growth, post-processing, etc., can solve problems such as being unfavorable to ensure the stability of airflow in the quartz tube, achieve constant pressure, increase stability and repeatability, maintain The effect of stability
CN103374757BActive Publication Date: 2015-11-04YINGLI ENERGY CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
YINGLI ENERGY CHINA
Publication Date
2015-11-04

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Abstract

The invention discloses an improved exhaust gas emission device for a diffusion furnace. The device comprises a first gas surge flask, a ventilation device, a pressure monitoring device and a nitrogen compensation device. The pressure monitoring device and the nitrogen compensation device are in one-way connection; one end of the first gas surge flask is sequentially connected with a second surge flask,... an N surge flask, and then connected to the ventilation device; and the pressure monitoring device is arranged on any gas surge flask after the gas surge flask, which the nitrogen gas compensation device is in, or a connecting pipe between gas surge flasks. According to the invention, on the basis of the original device, the number of gas surge flasks is increased, the position of the pressure monitoring device is adjusted, so as to avoid lagging gas compensation, directly reduce influences of fluctuations of the ventilation device on the flow in a quartz tube, facilitate stability of flow in the quartz tube, ensure constant pressure of flow in the diffusion quartz tube, improve process stability, and ensure uniformity of square resistance and the quality of a PN junction.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor device preparation. Background technique

[0002] The main process of solar crystalline silicon cell production includes: texturing, diffusion, wet etching, deposition of anti-reflection film, screen printing and sintering. Among them, diffusion is the main process of PN junction preparation, and PN junction is the core structure of solar cells, and the quality of PN junction has an important impact on the conversion efficiency of solar crystal silicon cells. The uniformity of the square resistance is a measure of the quality of the PN junction, and the uniformity of the square resistance has a great relationship with the constant or not of the gas flow in the quartz furnace tube. The influence of airflow is very necessary.

[0003] The current structure of the exhaust gas discharge device of the diffusion furnace is as follows: figure 1 As shown, it mainly includes a gas buffer bottle an...

Claims

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