Sense amplifier circuit and memory

Abstract

The invention relates to a read amplification circuit and a memory. The read amplification circuit comprises a basic physical unit composed of a plurality of storage units, a reference unit set and a read amplifier, wherein the storage units are correspondingly connected to respective read bit lines; the basic physical unit is gated via a first gate tube; the reference unit set has the same configuration as the basic physical unit and is composed of a plurality of reference units; the reference units and the storage units are one-to-one correspondence; the reference units are correspondingly connected with respective reference voltage lines, and respectively have the same structure as the corresponding storage units; the reference unit set is gated via a second gate tube; the second gate tube has the same structure as the first gate tube; the read amplifier is connected with the read bit lines and the reference voltage lines, and outputs corresponding read data according to the comparative result between the read bit lines and the voltages on the corresponding reference voltage lines. The read amplification circuit can enhance the data read speed when reading the memory, and prolong the service life of the memory.

Description

technical field [0001] The invention relates to the field of memory design, in particular to a sense amplifier circuit and memory for non-volatile memory. Background technique [0002] Non-volatile memory (NVM, Non Volatile Memory) is widely used in various electronic circuits because it can still maintain data information when the system is powered off or has no power supply. Non-volatile memory generally includes two types according to its structure type: floating gate type and charge well type. In floating-gate memory, charge is stored in floating gates, which retain the charge in the absence of a power supply. Floating gate memories generally have a gate structure in which a control gate and a floating gate are stacked. Floating gate memory is usually used in EPROM (Electrically Programmable Read Only Memory) and EEPROM (Electrically Erasable and Programmable Read Only Memory). [0003] In an EEPROM, a single-ended sense amplifier is usually used to read out data in a...

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Problems solved by technology

Therefore, the matching between the structure setting of the current 1-bit reference cell and each memory cell in the memory array is poor, and it is difficult to ensure that when reading data in the 8-bit memory cell, the voltage of the reference voltage line 4 is always at the level of the read bit line 3. The intermediate value of the voltage (the corresponding voltage when reading "0" and "1"), which will cause the readout speed of the sense amplifier to slow down, and even cause readout data errors

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