Sense amplifier circuit and memory for non-volatile memory

Abstract

The invention relates to a read amplification circuit for a nonvolatile memory and a memory. The read circuit comprises a basic physical unit composed of a plurality of storage units, a reference unit set and a read amplifier, wherein the storage units are correspondingly connected to respective read bit lines; the basic physical unit is gated via a first gate tube; the reference unit set has the same configuration as the basic physical unit and is composed of a plurality of reference units; the reference units and the storage units are one-to-one correspondence; the reference units are correspondingly connected with respective reference voltage lines, and respectively have the same structure as the corresponding storage units; the reference unit set is gated via a second gate tube; the second gate tube has the same structure as the first gate tube; the read amplifier is connected with the read bit lines and the reference voltage lines, and outputs corresponding read data according to the comparative result between the read bit lines and the voltages on the corresponding reference voltage lines. The read amplification circuit can enhance the data read speed when reading the memory, and prolong the service life of the memory.

Description

Technical field [0001] The present invention relates to the field of memory design, and in particular to a sense amplifier circuit and a memory for non-volatile memory. Background technique [0002] Non-volatile memory (NVM, NonVolatileMemory) is widely used in various electronic circuits because it can retain data information when the system is powered off or without power supply. Non-volatile memories generally include two types according to their structure types: floating gate type and charge trap type. In floating-gate memory, charges are stored in the floating gate, and they can retain the charge even when there is no power supply. Floating gate memories generally have a gate structure in which a control gate and a floating gate are stacked. Floating gate memory is usually used for EPROM (ElectricallyProgrammableReadOnlyMemory) and EEPROM (ElectricallyErasableandProgrammableReadOnlyMemory). [0003] In EEPROM, a single-ended sense amplifier is usually used to read out the d...

AI Technical Summary

Problems solved by technology

In this case, the data readout speed of the sense amplifier will be slowed down, and in the worst case, the wrong data will be read out.

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