Temperature compensation system and method of hydrogen sensor with palladium nano structure based on quantum transportation

A technology of temperature compensation and quantum transport, applied in the direction of microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve problems such as error, aging of gas sensitive materials, deviation of numerical relationship between hydrogen pressure or concentration, etc., to achieve a solution The effect of measuring error, reducing production cost, and improving measurement accuracy

Inactive Publication Date: 2013-11-20
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After the sensor chip is used for a long time, it will inevitably cause the aging of the gas-sensitive material, which makes the numerical relationship of hydrogen pressure or concentration deviate from the original calibration data, and inevitably introduces errors in the measurement process.

Method used

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  • Temperature compensation system and method of hydrogen sensor with palladium nano structure based on quantum transportation
  • Temperature compensation system and method of hydrogen sensor with palladium nano structure based on quantum transportation

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Embodiment 1

[0034] see figure 1 , a temperature compensation system of a palladium nanostructure hydrogen sensor based on quantum transport, the system includes: a signal excitation source (1), a palladium nanostructure hydrogen sensor chip module (2), a signal differential circuit (3); a signal excitation source (1) is connected with the palladium nanostructure hydrogen sensor chip module (2), and the palladium nanostructure hydrogen sensor chip module (2) is connected with the signal differential circuit (3).

[0035] Such as figure 2 As shown in A, the signal excitation source (1) consists of a voltage regulator chip AD1585 and three capacitors C1, C2 and C3. The input terminal IN of AD1585 is powered by 12V DC voltage, 10μF capacitor C1 and 4.7μF capacitor C2 are connected between the IN terminal and GND terminal, the GND port of AD1585 is grounded, and a 1μF capacitor C3 is connected between the OUT port of AD1585 and GND. The OUT port can output the DC 5V regulated source VCC. ...

Embodiment 2

[0039] A method for temperature compensation with a temperature compensation system of a palladium nanostructure hydrogen sensor based on quantum transport, the specific steps are as follows:

[0040] A. Firstly, using metal palladium as the target, palladium nanoparticles are prepared by plasma gas aggregation method, and the palladium nanoparticles are deposited between the interdigital electrodes, and then a palladium nanostructure hydrogen sensor chip based on the tunneling principle can be obtained a (see patent CN 200910028487), under room temperature conditions, the prepared palladium nanostructure hydrogen sensor chip a The initial resistance value of R2=4MΩ. Another palladium nanostructured hydrogen sensor chip with the same initial resistance R4=4MΩ was prepared by the same method b ;

[0041] B. If figure 2 B, Pd nanostructured hydrogen sensor chip b Sealed in a shell (4) made of copper (or ceramic material), the shell (4) has electrical terminals, through whic...

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Abstract

The invention provides a temperature compensation system and a method of hydrogen sensor with palladium nano structure based on quantum transportation, and aims to radically solve the problem of measure errors of sensor because of the temperature change from the physical hardware. A chip a and a chip b, which has the same category of resistance-temperature curve, of hydrogen sensor with palladium nano structure are adopted in the method, and the two chips are respectively connected to the input terminal of a differentiator. In the two chips of hydrogen sensor with palladium nano structure, the chip a of hydrogen sensor with palladium nano structure is exposed to a hydrogen source, and the change of the resistance value comprises two parts: one part is caused by the change of hydrogen pressure or hydrogen concentration and the other part is caused by the change of temperature. The chip b of hydrogen sensor with palladium nano structure is sealed in a shell body and is insulated from the outer gas, the change of the resistance value is solely caused by the change of temperature, and the resistance value of the chip b is used for compensating the drift caused by temperature. The measure error of hydrogen concentration caused by the temperature change can be eliminated after the calculation of the two sensor signal of the two chips by a differentiator.

Description

technical field [0001] The invention belongs to the field of gas sensors and microelectromechanical devices, and in particular relates to a temperature compensation system and method for a hydrogen sensor based on a quantum transport process. Background technique [0002] Researchers from the Second University of Montpellier in France and the University of California in the United States have jointly developed a palladium nanostructure hydrogen sensing mechanism based on the electron quantum tunneling process (see science 293, 2227 (2001)). This new type of hydrogen sensing mechanism uses the tunnel penetration current in the metal palladium nanostructure as the sensing response. Compared with the traditional hydrogen sensor, it has the advantages of high sensitivity, fast response and stable performance. It is suitable for projects involving hydrogen safety. The technical field has extremely high practical value. Xie Bo et al. have developed a solution for hydrogen sensi...

Claims

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Application Information

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IPC IPC(8): G01N27/04B81C1/00
Inventor 谢波郑蒙阳韩民
Owner NANJING UNIV
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