Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Packaging-prior-to-etching type three-dimensional system-level chip-flipped bump packaging structure and process method thereof

A system-level chip, etch first and then seal technology, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve the problems of not being able to embed chips, limiting the integration of packaging functions, etc.

Active Publication Date: 2013-11-20
江苏尊阳电子科技有限公司
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is to overcome the above-mentioned shortcomings, and provide a three-dimensional system-in-package structure and process method for sealing first and then etching chips, which can solve the problem that traditional metal lead frames or multilayer circuit substrates cannot embed chips and passive components. The problem of packaging function integration and traditional organic substrates require thinner line width and narrower line-to-line spacing

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Packaging-prior-to-etching type three-dimensional system-level chip-flipped bump packaging structure and process method thereof
  • Packaging-prior-to-etching type three-dimensional system-level chip-flipped bump packaging structure and process method thereof
  • Packaging-prior-to-etching type three-dimensional system-level chip-flipped bump packaging structure and process method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0199] Embodiment 1, single-layer circuit single-chip flip-chip single-turn pin

[0200] see Figure 29 , is a structural schematic diagram of Embodiment 1 of the three-dimensional system-level chip flip-chip bump packaging structure of the present invention, which includes a base island 1 and pins 2, and the front side of the base island 1 is passed through a conductive or non-conductive adhesive material 3 is equipped with the first chip 4, and the second chip 6 is provided on the back of the base island 1 and the pin 2 through the underfill glue 5, and the front of the first chip 4 and the front of the pin 2 are respectively connected by metal wires 7, and a conductive pillar 8 is arranged on the front of the pin 2, the area around the base island 1, the area between the base island 1 and the pin 2, the area between the pin 2 and the pin 2, The area above the base island 1 and the pin 2, the area below the base island 1 and the pin 2, and the first chip 4, the second chip ...

Embodiment 2

[0258] Embodiment 2, multi-turn single-chip flip chip + passive device + electrostatic discharge ring

[0259] see Figure 20 , is a structural schematic diagram of Embodiment 2 of the three-dimensional system-level chip flip-chip bump packaging structure of the present invention, the difference between Embodiment 2 and Embodiment 1 is that the conductive pillar 8 has multiple turns, and the lead The passive device 11 is bridged between the pin 2 and the pin 2 through a conductive adhesive substance, and an electrostatic discharge ring 15 is arranged between the base island 1 and the pin 2, and the passive device 11 can be bridged to the lead. Between the back of the pin 2 and the front of the pin 2, or between the back of the pin 2 and the back of the ESD ring 15, or between the back of the base island 1 and the back of the ESD ring 15.

Embodiment 3

[0260] Embodiment 3, single-turn multi-base island tiling multi-chip flip chip

[0261] see Figure 31 , is a structural schematic diagram of Embodiment 3 of the three-dimensional system-level chip flip-chip bump packaging structure of the present invention, the difference between Embodiment 3 and Embodiment 1 is that: on the back of the base island 1 and the pin 2 A plurality of second chips 6 are disposed through the underfill glue 5 , and the front surfaces of the second chips 6 are connected to the front surfaces of the second chips 6 by metal wires 7 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a packaging-prior-to-etching type three-dimensional system-level chip-flipped bump packaging structure and a process method thereof. The structure comprises a pad and pins, wherein a first chip is arranged on the front surface of the pad; second chips are flipped on the back surfaces of the pad and the pins through bottom filling adhesives; the front surfaces of the first chip and the pins are connected through metal wires; conductive columns are arranged on the front surfaces of the pins; molding compounds are encapsulated in the peripheral area of the pad, the areas between the pad and the pins and between each two pins, the upper areas of the pad and the pins, the lower areas of the pad and the pins, and the external areas of the first chip, the second chips, the metal wires and the conductive columns; anti-oxidation layers are plated on the surfaces, exposed from the molding compounds, of the pins and the conductive columns; and metal balls are arranged on the tops of the conductive columns. By virtue of the packaging-prior-to-etching type three-dimensional system-level chip-flipped bump packaging structure and the process method thereof, the problem of limitation of the whole packaging functional integrity caused by difficulty in embedding of an object into a conventional metal lead frame or a conventional organic substrate can be solved.

Description

technical field [0001] The invention relates to a three-dimensional system level chip flip-chip bump package structure and process method which are etched first and sealed later. It belongs to the technical field of semiconductor packaging. Background technique [0002] Traditional four-sided leadless metal lead frame package structure such as Figure 81 As shown, the main manufacturing process is to take metal sheets for chemical etching and metal plating to make a base island for carrying chips and a metal lead frame with inner and outer pins, and then perform one-sided chip loading and wire bonding on this basis. , encapsulation and other packaging processes. [0003] The traditional organic multilayer circuit substrate packaging structure such as Figure 82 As shown, the main process is to form a multi-layer circuit board by stacking the core material of the glass fiber board by accumulating materials, opening holes between the circuit layers by laser drilling, and the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/48H01L21/56H01L23/495H01L23/31
CPCH01L2224/48091H01L2224/73265H01L2224/83192H01L2224/92247
Inventor 梁志忠王亚琴王孙艳林煜斌张凯
Owner 江苏尊阳电子科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products