One-dimensional electronic gas GaN-based HEMT (High Electron Mobility Transistor) device adopting selective area epitaxy and preparation method thereof

Abstract

The invention discloses a one-dimensional electronic gas GaN-based HEMT (High Electron Mobility Transistor) device adopting selective area epitaxy and a preparation method thereof, and mainly solves the problems of poor high temperature and high voltage characteristics, frequency characteristic and power characteristic of an existing one-dimensional electronic gas device. The device comprises a substrate, a buffering layer, a passivation layer and a protection layer from bottom to top; the buffering layer adopts GaN; the buffering layer is provided with barrier layer strips and masking layer strips, which are periodically arranged at intervals; both ends of each barrier layer strip respectively are a source electrode and a drain electrode; the passivation layer is positioned on the barrier layer strips and the masking layer strips; the passivation layer is provided with a grid slot; a grid electrode is arranged in the grid slot; and the barrier layer strips adopt AlGaN and the width of each barrier layer strip is in nanometer dimension so as to form one-dimensional electronic gas. Compared with Si-based and GaAs-based one-dimensional electronic gas devices, due to the adoption of a wide bandgap semiconductor GaN with the outstanding material characteristics, the one-dimensional electronic gas GaN-based HEMT device adopting selective area epitaxy has excellent high temperature and high voltage characteristics, frequency characteristic and power characteristic, and the ultrahigh speed and low power consumption one-dimensional electronic gas device can be made.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular a one-dimensional electron gas HEMT device based on a GaN semiconductor material heterojunction structure, which can be used as a basic device of a microwave, millimeter wave communication system and a radar system. Background technique [0002] III-V compound semiconductor materials are the third-generation semiconductor materials that have been developed rapidly for more than ten years, such as GaN-based, GaAs-based, InP-based and other semiconductor materials, which have a large band gap and can be combined with InN, AlN, etc. Alloy semiconductors are formed to make their forbidden band width adjustable. People usually use these III-V compound semiconductor materials to form various heterojunction structures. Due to the large difference in the forbidden band width of the III-V compound semiconductor materials on both sides of the het...

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Problems solved by technology

[0017] one. Due to the small bandgap of Si and GaAs semiconductor materials, the intrinsic carrier concentration is high and the breakdown electric field is small, which makes the prepared Si-based and GaAs-based devices have poor high-temperature and high-voltage characteristics and poor radiation resistance. weak;

[0018] two. Due to the poor electron transport characteristics of Si and GaAs semiconductor materials, the frequency characteristics of Si-based and GaAs-based devices prepared are poor;

[0019] three. Due to the poor polarization characteristics of Si and GaAs semiconductor materials when forming heterojunctions, the electron concentration is greatly limited, making the prepared Si-based and GaAs-based devices have poor power characteristics.

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