Semiconductor manufacturing method based on self-aligned double-patterning technology

Abstract

The invention relates to a semiconductor manufacturing method based on the self-aligned double-patterning technology. The method comprises the steps that a mask layer containing silicon is formed above a low k material layer or an ultralow k material layer formed above a semiconductor substrate; a nonnitrogenous oxide mask layer is formed above the mask layer containing the silicon; a metal mask layer is formed above the nonnitrogenous oxide mask layer; an oxide mask layer is formed above metal mask layer; patterning is conducted on the oxide mask layer; nitrides are deposited on the patterned oxide mask layer and the metal mask layer, etching is conducted on the nitrides, and therefore, space walls are formed on the side walls of the oxide mask layer; a one-end-cutting step is conducted to remove the nitride space walls at the two ends of the oxide mask layer; monoxides are deposited to fill gaps between the nitride space walls; the nitride space walls are removed. The semiconductor manufacturing method based on the self-aligned double-patterning technology has the advantage that the selectivity of the oxides and the nitrides in the manufacturing process is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular, the invention relates to a semiconductor manufacturing method based on self-aligned double patterns. Background technique [0002] For the increasing demand for high-capacity semiconductor storage devices, the integration density of these semiconductor storage devices has attracted people's attention. In order to increase the integration density of semiconductor storage devices, many different methods have been adopted in the prior art, such as by reducing the wafer size. And / or change the internal structure unit to form multiple memory units on a single wafer. For the method of increasing the integration density by changing the unit structure, attempts have been made to reduce the unit area. [0003] NAND flash memory is a better storage solution than hard disk drives. Since NAND flash memory reads and writes data in units of pages, it is suitable for storing continuous...

AI Technical Summary

Problems solved by technology

[0008] In order to solve the problem that the yield of semiconductor devices is not high due to the unreasonable setting of the mask layer in the back-end process (BEOL) of the semiconductor device and the low selectivity of the mask layer above or below it, the present invention Provided is a semiconductor manufacturing method based on self-aligned double patterns, the method comprising:

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