Manufacturing method of quantum dot light-emitting component and quantum dot displaying device

Abstract

The invention provides a manufacturing method of a quantum dot light-emitting component and a quantum dot displaying device. The quantum dot light-emitting component comprises a quantum dot luminous layer, a hole transferring layer and an electron transferring layer. The manufacturing method includes mixing quantum dot light-emitting materials with hole transferring materials, or mixing quantum dot light-emitting materials with electron transferring materials to dissolve in organic solvent to prepare mixed solvent; coating the mixed solvent on a preparing substrate of the quantum dot light-emitting component; removing the organic solvent on the preparing substrate coated with the mixed solvent, separating the preparing materials of the quantum dot light-emitting materials and the hole transferring materials or the preparing materials of the quantum dot light-emitting materials and the electron transferring materials on the preparing substrate into layers to form a quantum dot light-emitting layer and a hole transferring layer or a quantum dot light-emitting layer and an electron transferring layer. With the manufacturing method of the quantum dot light-emitting component and the quantum dot displaying device, the quantum dot light-emitting layer and the hole transferring layer (or the electron transferring layer) can be manufactured in one step without being manufactured in many steps, so that manufacturing process is simplified.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing a quantum dot light-emitting element and a quantum dot display device. Background technique [0002] Quantum dots (Quantum Dot, QD), also known as nanocrystals, are quasi-zero-dimensional nanomaterials. The sizes of the three dimensions of quantum dots are all between 1 and 10nm, and the movement of internal electrons in all directions is limited. , so the quantum confinement effect is particularly significant. Since electrons and holes are quantum-confined, the continuous energy band structure becomes a discrete energy-level structure with molecular characteristics. For quantum dots of different sizes, the degrees of quantum confinement of electrons and holes are different, and the discrete energy level structure of molecular characteristics is also different due to the size of quantum dots. Therefore, after being excited by external energy, quantum...

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Problems solved by technology

[0005] In the manufacturing process of quantum dot light-emitting elements in the prior art, the structure of each layer of the quantum dot light-emitting layer is realized in a step-by-step or layer-by-layer manner, and the quantum dot light-emitting layer is usually formed on the hole transport layer by a solution process. Since the solvent used to form the quantum dot light-emitting layer will dissolve the hole transport layer components when forming the quantum dot light-emitting layer, the components of the hole transport layer below the quantum dot light-emitting layer are also dissolved, so it is necessary to select Materials that cannot be dissolved in the process, so the materials for preparing the hole transport layer are limited; in addition, when the above-mentioned preparation method is used, the quantum dot light-emitting element has many procedures and complicated processes, which makes it difficult to reduce the manufacturing cost

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