Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Back-illuminated image sensor and method for reducing dark current of back-illuminated image sensor

An image sensor, back-illuminated technology, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as large dark current, and achieve the effect of preventing dark current

Active Publication Date: 2016-01-27
GALAXYCORE SHANGHAI
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The problem solved by the present invention is to provide a back-illuminated image sensor and a method for reducing the dark current of the back-illuminated image sensor, so as to solve the problem of relatively large dark current in the existing back-illuminated image sensor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Back-illuminated image sensor and method for reducing dark current of back-illuminated image sensor
  • Back-illuminated image sensor and method for reducing dark current of back-illuminated image sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] A back-illuminated image sensor generally includes a photodiode for receiving light to generate photocharges and a transfer transistor for transferring the photocharges to a floating diffusion region (Floating Diffusion, FD). In the back-illuminated image sensor, when forming the gate of the transfer transistor and the corresponding gate spacer, various etching processes will be performed, and the etching process will also affect the surface of the substrate directly above the photodiode. Etching will cause more defects on the surface of part of the substrate, and these defects will cause the semiconductor substrate material on the surface to generate deep energy levels, thereby causing the semiconductor substrate material to easily generate carriers even in the absence of light. These carriers are easily transferred into the photodiode under the defect, leading to the generation of dark current.

[0034] To this end, the present invention provides a back-illuminated im...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A back-illuminated image sensor and a method for reducing the dark current of the back-illuminated image sensor, the back-illuminated image sensor includes: a photodiode; a first conductivity type isolation layer; a gate structure of a transfer tube, corresponding to the first A conductivity type isolation layer is formed on the upper surface of the semiconductor substrate of the first conductivity type; the gate structure includes: a gate oxide layer, a gate layer and a gate spacer; the gate structure corresponds to cover the photoelectric A diode; a floating diffusion region formed in the semiconductor substrate of the first conductivity type and heavily doped with the second conductivity type. In the back-illuminated image sensor, the surface of the semiconductor substrate of the first conductivity type directly above the photodiode is not prone to defects, thereby effectively preventing the generation of dark current.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a back-illuminated image sensor and a method for reducing dark current of the back-illuminated image sensor. Background technique [0002] Image sensors are semiconductor devices that convert optical signals into electrical signals. The image sensor includes a photodiode (photodiode, PD) for sensing light and a logic circuit for converting the sensed light into an electrical signal. [0003] Conventional image sensors have a front-side illuminated structure in which photodiodes are formed below the substrate surface, logic circuits are formed above the photodiodes, and light reaches the photodiodes after passing through the logic circuits, during which light passes through the multilayer structure, resulting in Light loss or crosstalk of light to adjacent image sensor unit chips affects the photoresponse characteristics of the photodiodes of each image sensor unit chip. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/1464H01L27/14612H01L27/14616H01L27/1463
Inventor 李文强赵立新李杰徐泽
Owner GALAXYCORE SHANGHAI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com