Manufacturing method of P type semiconductor element for refrigeration or heating device

Abstract

The invention discloses a manufacturing method of a P type semiconductor element for a refrigeration or heating device. The manufacturing method of the P type semiconductor element for the refrigeration or heating device is characterized in that the P type semiconductor element is made of tellurium materials, bismuth materials and selenium materials. The manufacturing method of the P type semiconductor element for the refrigeration or heating device comprises the steps of (1) smashing the tellurium materials, the bismuth materials and the selenium materials, grinding the tellurium materials, the bismuth materials and the selenium materials to enable the sizes of the tellurium materials, the sizes of the bismuth materials and the sizes of the selenium materials to be 2000 meshes or more than 2000 meshes; (2) carrying out batching on the tellurium materials, the bismuth materials and the selenium materials to obtain a mixed material according to the proportion of parts by weight, wherein the P type semiconductor element comprises, by weight, 50-60 parts of tellurium, 15-20 parts of bismuth and 25-30 parts of selenium. When the P type semiconductor element is in operation, the temperature difference between the two ends of the P type semiconductor element is large. According to tests, when the P type semiconductor element is in operation, the temperature difference between the cold end and the hot end of the P type semiconductor element can be about 73-78 DEG C. Therefore, the manufacturing method of the P type semiconductor element for the refrigeration or heating device has the advantages of being high in working efficiency and low in energy consumption, and the P type semiconductor element is specially applicable to manufacturing of the refrigeration or heating device of a semiconductor.

Description

technical field [0001] The invention relates to a method for manufacturing a P-type semiconductor element used for cooling or heating devices, and belongs to the technical field of semiconductor manufacturing. Background technique [0002] Utilizing the characteristics of P-type semiconductors and N-type semiconductors that can generate different temperatures at both ends of the hot end and cold end when they are energized, it has been widely used in the field of semiconductor refrigeration or heating devices. At present, in the prior art, when making P-type semiconductors, it is usually used to dope trivalent elements (such as boron) into pure silicon crystals to replace the positions of silicon atoms in the crystal lattice, thus forming P-type semiconductors. semiconductor. The P-type semiconductor element produced by this traditional method, when it is used to make refrigeration or heating devices, this P-type semiconductor element mainly has a small temperature differen...

AI Technical Summary

Problems solved by technology

The P-type semiconductor element produced by this traditional method, when it is used to make refrigeration or heating devices, this P-type semiconductor element mainly has a small temperature difference between the two ends (the temperature difference between the hot end and the cold end is small). Generally around 60 degrees), low cooling or heating efficiency, high energy consumption and other issues; in addition, the existing P-type semiconductor components cannot distinguish the head end from the tail end, so it is used to make refrigeration Or when heating devices, the connection between them cannot realize the orderly connection of the head and the tail, but the connection of the head and the tail is chaotic, so the power conversion efficiency of the semiconductor element cannot be effectively utilized, and its working efficiency is reduced.

Therefore, the use effect of the existing P-type semiconductor elements used for cooling or heating devices is still not ideal.