Non-corrosive polishing solution of mechanical equipment

Abstract

The invention discloses a non-corrosive polishing solution of mechanical equipment, which comprises the following substances in parts by weight: 21-30 parts of sodium salicylate, 9-12 parts of sodium acetate, 8-10 parts of sodium oxalate, 2-8 parts of sodium benzoate, 3-6 parts of monopotassium phosphate, 1-2 parts of antistatic agent, 4-9 parts of methyl silicone oil, 8-13 parts of liquid halloysit, 3-8 parts of stearic acid, 7-10 parts of purifier, 11-18 parts of treatment agent, 3-5 parts of titanium dioxide, 2-4 parts of monopotassium phosphate, 1-2 parts of molecular sieve, 1 part of kieselguhr, 2-4 parts of sodium borate, 1 part of mica powder in a laminated structure and 1-2 parts of hollow glass microsphere. The chemical machinery polishing solution can inhibit the polishing velocity of a low dielectric material, has a small influence on the removal velocity of copper and silicon dioxide, and can reduce pollutants on the surface of a polished material.

Description

technical field [0001] The invention relates to a non-corrosive polishing liquid for mechanical equipment. Background technique [0002] Due to the high dielectric constant of the traditional dielectric layer material, the capacitance between the conductive layers will increase, which will affect the speed of the integrated circuit and reduce the efficiency. With the complexity and refinement of the integrated circuit, this base material It is increasingly unable to meet the technical requirements of more advanced processes. The introduction of low dielectric materials into the substrate is an inevitable trend in the development of integrated circuit technology, and many polishing slurries for low dielectric materials have been produced. However, none of the low-dielectric material polishing fluids in the prior art has achieved the perfect combination of manufacturing cost and technical performance. Contents of the invention [0003] The technical problem to be solved by ...

AI Technical Summary

Problems solved by technology

[0002] Due to the high dielectric constant of the traditional dielectric layer material, the capacitance between the conductive layers will increase, which will affect the speed of the integrated circuit and reduce the efficiency. With the complexity and refinement of the integrated circuit, this base material It is increasingly unable to meet the technical requirements of more advanced processes. The introduction of low dielectric materials into the substrate is an inevitable trend in the development of integrated circuit technology, and many polishing slurries for low dielectric materials have been produced.

However, the current low-dielectric material polishing fluids in the prior art have not achieved the perfect combination of manufacturing cost and technical performance.