Plasma processing device and plasma processing method

A plasma and treatment device technology, applied in the field of plasma treatment devices, can solve the problems of uneven plasma distribution, uneven plasma treatment results, etc., and achieve good treatment effect, uniform plasma density distribution, and stable density distribution. Effect

Active Publication Date: 2016-02-03
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Abstract
  • Description
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Problems solved by technology

[0005] However, in the existing inductively coupled plasma processing device, the distribution of plasma is uneven, resulting in uneven plasma processing results

Method used

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  • Plasma processing device and plasma processing method
  • Plasma processing device and plasma processing method
  • Plasma processing device and plasma processing method

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Embodiment Construction

[0037] As mentioned in the background, in the existing inductively coupled plasma processing apparatus, the distribution of plasma is uneven, resulting in uneven plasma processing results.

[0038] After research, please continue to refer to figure 1 Since the reaction gas input into the reaction chamber 10 is ionized by the magnetic field generated by the inductively coupled coil 12 to form plasma, the distribution of the magnetic field generated by the inductively coupled coil 12 will affect the distribution of the plasma. Wherein, since the inductively coupled coil 12 is usually a planar spiral coil (spiral coils) or a toroidal tube (solenoid coils), the closer to the center of the inductively coupled coil 12, the stronger the magnetic field intensity generated by the inductively coupled coil 12 is. The inductive coupling coil 12 is arranged opposite to the wafer stage 11, so that in the reaction chamber 10, the plasma density is higher in the area near the center of the in...

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Abstract

Provided are a plasma treatment device and a plasma treatment method. The plasma treatment device comprises a plurality of concentrically-distributed inductive coupling coils arranged at the top of a reaction cavity and used for plasma treatment of gas in the reaction cavity, a plurality of radio-frequency power sources for respectively providing impulse type radio-frequency signals for the inductive coupling coils, and a control unit connected to the first radio-frequency power source and the second radio-frequency power source at least and used for controlling the impulse type radio-frequency signals formed by shifting of radio-frequency power output by the first radio-frequency power source and the second radio-frequency power source between the high-power output and the low-power output, wherein the inductive coupling coils are opposite to a wafer supporting table, the low-power output is larger than zero, and the control unit enables the impulse type radio-frequency power output by the first radio-frequency power source and the second radio-frequency power source to be independent and adjustable. The plasma distribution in the plasma treatment device is even, and the plasma treatment effect is good.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a plasma processing device and a plasma processing method. Background technique [0002] Plasma processing devices are widely used in the manufacturing process of integrated circuits, such as deposition, etching, etc. Among them, the inductively coupled plasma (ICP, Inductively Coupled Plasma) device is one of the mainstream technologies in plasma processing devices, and its principle is mainly The inductively coupled coil is driven by radio frequency power to generate a strong high frequency alternating magnetic field, so that the low pressure reaction gas is ionized to generate plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. The above-mentioned active particles can undergo various physical and chemical reactions with the surface of the wafer to be processed, causing the morp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05H1/46
Inventor 叶如彬倪图强
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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