Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Enrichment method of semiconductor type carbon nanotubes

A technology of carbon nanotubes and single-walled carbon nanotubes, which is applied in the direction of carbon nanotubes, nanocarbons, chemical instruments and methods, etc., can solve problems such as difficult separation operations, inhibition of practicability, and unsuitability for mass production, and achieve separation Good effect, maintaining intrinsic characteristics, and improving separation efficiency

Inactive Publication Date: 2014-01-01
UNIV OF SHANGHAI FOR SCI & TECH
View PDF2 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The advantage of this separation method is that it is easy to operate, but its disadvantage is that it is difficult to perform a large number of separation operations and is not suitable for mass production, thus greatly inhibiting its practicability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Enrichment method of semiconductor type carbon nanotubes
  • Enrichment method of semiconductor type carbon nanotubes
  • Enrichment method of semiconductor type carbon nanotubes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A method for enriching semiconducting carbon nanotubes, specifically comprising the steps of:

[0037] (1) Dissolve 10 mg of solid oxidizing compound in 100 ml of liquid reagent, and control the concentration of solid oxidizing compound to 0.1 mg / ml to obtain a solid oxidizing compound solution with a concentration of 0.1 mg / ml;

[0038] The solid oxidizing compound is tetrafluoroborate nitric acid;

[0039] Described liquid reagent is trichloromethane;

[0040] (2) Ultrasonic disperse 10 mg of single-walled carbon nanotubes into 100 ml of the solid oxidizing compound solution obtained above, and ultrasonically disperse for 5 minutes to obtain a uniform dispersion of carbon nanotubes with a concentration of 0.1 mg / ml;

[0041] (3) Place the uniform dispersion of carbon nanotubes obtained above into a microwave reactor, control the temperature at 40°C, and conduct a microwave reaction for 120 minutes to obtain a reaction solution;

[0042] (4) Vacuum filter the reactio...

Embodiment 2

[0047] (1) Dissolve 10 mg of solid oxidizing compound in 100 ml of liquid reagent, and control the concentration of solid oxidizing compound to 0.1 mg / ml to obtain a solid oxidizing compound solution with a concentration of 0.1 mg / ml;

[0048] The solid oxidizing compound is nitrous tetrafluoroborate;

[0049] The liquid reagent is deionized water;

[0050] (2) Ultrasonic disperse 10 mg of single-walled carbon nanotubes into 100 ml of the solid oxidizing compound solution obtained above, and ultrasonically disperse for 10 minutes to obtain a uniform dispersion of carbon nanotubes with a concentration of 0.1 mg / ml;

[0051] (3) Place the uniform dispersion of carbon nanotubes obtained above into a microwave reactor, control the temperature at 90°C, and perform a microwave reaction for 100 minutes to obtain a reaction solution;

[0052] (4) Vacuum filter the reaction solution obtained above, wash the filter cake with deionized water until the pH value of the filtrate is neutral...

Embodiment 3

[0055] (1) Dissolve 20 mg of solid oxidizing compound in 80 ml of liquid reagent, and control the concentration of solid oxidizing compound to 0.25 mg / ml to obtain a solid oxidizing compound solution with a concentration of 0.25 mg / ml;

[0056] The solid oxidizing compound is diazonium fluoroborate;

[0057] The liquid reagent is dimethylformamide;

[0058] (2) Ultrasonic disperse 50 mg of single-walled carbon nanotubes into 100 ml of the solid oxidizing compound solution obtained above, and ultrasonically disperse for 10 minutes to obtain a uniform dispersion of carbon nanotubes with a concentration of 0.5 mg / ml;

[0059] (3) Place the uniform dispersion of carbon nanotubes obtained above into a micro-blog reactor, control the temperature at 150°C, and perform a microwave reaction for 25 minutes to obtain a reaction liquid;

[0060] (4) Vacuum filter the reaction solution obtained above, wash the filter cake with deionized water until the pH value of the filtrate is neutral,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses an enrichment method of semiconductor type carbon nanotubes. The enrichment method comprises the steps as follows: firstly, a solid oxidizing compound is dissolved in a liquid reagent to obtain a solid oxidizing compound solution; then, single-wall carbon nanotubes required to be purified are uniformly dispersed into the obtained solid oxidizing compound solution to obtain a carbon nanotube dispersion liquid with a concentration of 0.1-0.5 mg / ml; the obtained carbon nanotube dispersion liquid is placed in a microwave reactor for reaction at a reaction temperature controlled to range from 40 DEG C to150 DEG C for 25-120 min; and an obtained reaction liquid is sequentially filtered, washed, dried and annealed in vacuum or inert atmosphere to obtain the semiconductor type carbon nanotubes. According to the enrichment method of the semiconductor type carbon nanotubes, stability of structures and performance of separated carbon nanotubes is guaranteed, accuracy control for the separation process of the carbon nanotubes is realized, and a product with the semiconductor type carbon nanotube content of 90%-93% is obtained finally.

Description

technical field [0001] The invention relates to a method for enriching semiconductor-type carbon nanotubes, which belongs to the technical field of carbon nanotube material preparation. Single-walled carbon nanotubes have very unique properties due to their unique hollow tubular structure composed of a single carbon atomic layer, especially semiconductor-type single-walled carbon nanotubes have important application value in the field of nanoelectronic devices, and can be used for solar cells, nanometer Sensors, high-performance nanoelectronic devices, field emission materials and energy storage devices and other technical fields. Background technique [0002] Carbon nanotubes can be compared to one-dimensional tubular nanomaterials with a nanocavity structure formed by curling graphite layers in a certain direction, and they are regarded as allotropes of carbon elements together with fullerenes. Due to its unique chemical structure and excellent physical and chemical ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02C01B32/159C01B32/17C01B32/172
Inventor 邱汉迅申潇杨俊和王颖慧李静杨光智张慧娟唐志红赵斌
Owner UNIV OF SHANGHAI FOR SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com