Quantum dot film and backlight module

A technology of quantum dots and quantum dot layers, applied in the field of quantum dots, can solve the problems of short service life of quantum dots, increased cost, high temperature of LED chips, etc., and achieve the effect of improving light conversion efficiency, improving utilization rate, and reducing thickness

Inactive Publication Date: 2014-01-01
ZHANGJIAGANG KANGDE XIN OPTRONICS MATERIAL
9 Cites 165 Cited by

AI-Extracted Technical Summary

Problems solved by technology

The amount of quantum dots in the first position is very small, but the LED chip has a high temperature, and the service life of quantum dots is short
The third method is generally to disperse the quantum dots on the diaphragm, which is the farthest from the LED and the temperature is low, but the amount of quantum dots is large and the cost is high.
[0006] Th...
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Method used

Correspondingly, the backlight module in another embodiment of the present invention includes: light source, light guide plate, prism sheet, and quantum dot film, wherein the quantum dot film is positioned at any position above the light guide plate and under the prism sheet . The quantum dot film has a prism structure on one or both sides, which can combine light conversion, brightness enhancement and diffusion, and reduce the thickness of the backlight module.
In the above table, the external quantum efficiency represents the conversion efficiency of light, and the higher the numerical value, the greater the conversion rate. It can be seen that, by uniformly dispersing the diffusion particles in the matrix, the diffusion particles can scatter the incident light in the matrix and increase the optical path of the light passing through the quantum dot layer, thereby improving the utilization rate of the quantum dots and improving the light conversion efficiency. And can carry out optical atomization.
The present invention discloses a kind of quantum dot thin film, comprises quantum dot layer, quantum dot layer comprises matrix and some quantum dots uniformly dispersed in matrix, also comprises some uniformly dispersed diffusion particles in matrix, diffusion particles are used for The incident light within the matrix is ​​scattered, increasing the optical path of the light through the quantum dot layer. The difference in refractive index between the diffusing parti...
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Abstract

The invention discloses a quantum dot film and a backlight module. The quantum dot film comprises a quantum dot layer, wherein the quantum dot layer comprises a matrix and multiple quantum dots which are uniformly dispersed in the matrix; multiple diffusion particles which are uniformly dispersed are arranged in the matrix; a refractive index difference between the diffusion particles and the matrix is more than 0.01; the diffusion particles are used for scattering incident rays in the matrix; an optical path through which the rays pass the quantum dot layer is increased. According to the quantum dot film, the optical path through which the rays pass the quantum dot layer can be increased, the quantum dot utilization rate is increased, the light conversion efficiency is improved, and the cost is reduced. Moreover, three effects of light conversion, atomization and brightness enhancement can be provided, and the thickness of the backlight module is reduced.

Application Domain

Technology Topic

Optical pathMultiple quantum +3

Image

  • Quantum dot film and backlight module
  • Quantum dot film and backlight module
  • Quantum dot film and backlight module

Examples

  • Experimental program(3)

Example Embodiment

[0057] Implementation mode one:
[0058] Participate figure 1 As shown, a quantum dot film includes:
[0059] The quantum dot layer 10 includes a matrix 11 and a number of quantum dots uniformly dispersed in the matrix 11. In this embodiment, the quantum dots include red quantum dots 111 and green quantum dots 112. The matrix 11 also contains a number of uniformly dispersed diffusion particles 113, and the diffusion particles 113 are used to scatter incident light in the matrix and increase the optical path of the light passing through the quantum dot layer;
[0060] The water vapor barrier layers located on both sides of the quantum dot layer 10 include a first water vapor barrier layer 21 located above the quantum dot layer 10 and a second water vapor barrier layer 22 located below the quantum dot layer 10. The water vapor barrier layer is a solid material, or a solidified liquid, gel, or polymer.
[0061] In this embodiment, the material of the matrix 11 is acrylic resin, organosiloxane resin, acrylate modified polyurethane, acrylate modified silicone resin or epoxy resin, and the curing method of the matrix material is UV curing or thermal curing.
[0062] The diffusion particles 113 are one or two of inorganic particles and organic polymer particles. Inorganic particles include SiO 2 , TiO 2 , Al 2 O 3 , CaCO 3 , BaSO 4 One or more of; organic polymer particles include one of polymethyl methacrylate PMMA, polystyrene PS, acrylonitrile-butadiene-styrene copolymer ABS, polyurethane PU, and silicone polymer Or multiple.
[0063] The diameter of the diffusion particles 113 is 0.1um-20um, preferably 1um-15um. The diffusion particles 113 can be a single particle size dispersion or a mixture of multiple particle sizes, such as SiO in three sizes of 5um, 8um and 12um. 2 The particles are dispersed in the quantum dot layer according to the weight ratio of 2:1:0.5, which is like 5um SiO 2 And 5um PS particles are dispersed in the quantum dot layer at a weight ratio of 1:1.
[0064] The weight percentage of the diffusion particles in the quantum dot layer is 0.1% to 50%, and the preferred percentage of the total quantum dot layer is 0.1% to 10%, more preferably 1% to 5%. The weight ratio of the diffusion particles is determined by the refractive index difference between the diffusion particles and the matrix material. The refractive index difference between the diffusion particles 113 and the matrix 11 is greater than 0.01, preferably greater than 0.03. The greater the refractive index difference, the smaller the weight percentage of the diffusion particles, and the smaller the refractive index difference between the diffusion particles and the matrix material, the greater the weight percentage of the diffusion particles.
[0065] In this embodiment, the incident light in the matrix is ​​blue light, the quantum dots include green quantum dots and red quantum dots, and the diameter of the quantum dots is 1-10 nm. When the incident light is different, the number and type of quantum dots also need to be set separately.
[0066] The thickness of the quantum dot layer 10 is 1 um to 1000 um, preferably 10 um to 200 um, more preferably 50 um to 150 um.
[0067] Quantum dot materials include any one of the first compounds formed by elements of main group II and main group VI, any one of the second compounds formed by elements of main group III and main group V, A core-shell structure compound or doped nanocrystal formed by multiple coatings in the first compound and/or the second compound. The first compound includes CdSe, CdTe, MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, ZnS, ZnSe, ZnTe and CdS, and the second compound includes GaN, GaP, GaAs, InN, InP and InAs.
[0068] The water vapor barrier layer includes but is not limited to high molecular polymers (such as polyethylene terephthalate PET, polyethylene naphthalate PEN, polycarbonate PC, etc.), inorganic oxides, (such as SiO 2 , Si 2 O 3 , TiO 2 , Al 2 O 3 Etc.), or a combination of high molecular polymer and inorganic oxide.
[0069] The preferred water vapor barrier layer includes two or more layers of different materials or composites. For example, the inorganic and organic layers alternate with each other, which can provide high water and oxygen barrier properties. The moisture permeability is preferably 1mg/m 2 ·24h to 10E-6mg/m 2 ·24h, more preferably 10E-2mg/m 2 ·24h to 10E-3mg/m 2 ·24h, the oxygen transmission rate is preferably 1mL/m 2 ·24h to 10E-6mL/m 2 ·24h, more preferably 10E-2mL/m 2 ·24h to 10E-3mL/m 2 · 24h.
[0070] In this embodiment, if a resin with a refractive index of 1.4556 is selected as the matrix, PMMA microspheres are used as diffusion particles, and the excitation light source is 450nm blue light, the test results are as follows:
[0071] Numbering
[0072] (Among them, when the mass ratio of the diffused particles is between 5.0% and 50%, the haze value and external quantum efficiency are not significantly improved, and no examples are given in the above table)
[0073] The external quantum efficiency in the above table represents the conversion efficiency of light. The higher the value, the greater the conversion rate. It can be seen that by uniformly dispersing the diffusion particles in the matrix, the diffusion particles can scatter the incident light in the matrix and increase the optical path of the light passing through the quantum dot layer, thereby increasing the utilization rate of quantum dots and improving light conversion efficiency. And can be light atomized.
[0074] Participate figure 2 As shown, the light source 40 is an LED blue light source, the LED blue light enters the quantum dot layer, and the LED blue light excites two quantum dots of red and green, and the three colors of light are mixed to form white light. The blue light irradiates the diffusion particles to cause scattering, and the direction of the light changes. This part of the blue light can excite the green quantum dots or the red quantum dots, or it can be scattered again by another diffusion particle, thereby increasing the optical path of a single light beam through the quantum dot layer. , In the case of the same quantum dot distribution, improve the light conversion rate.

Example Embodiment

[0075] Implementation mode two:
[0076] Such as image 3 As shown, a first microstructure 31 is provided on the surface of the first water vapor barrier layer 21. In this embodiment, the first microstructure is an isosceles triangle. In other embodiments, the microstructures may also include isosceles triangles and polygons. One or more combinations of cones, cones, hemispheres, and irregular shapes with convex structures on the surface.
[0077] The quantum dot layer and the water vapor barrier layer in this embodiment are the same as those in the first embodiment, and will not be repeated here.

Example Embodiment

[0078] Implementation mode three:
[0079] Such as Figure 4 As shown, the surfaces of the first water vapor barrier layer 21 and the second water vapor barrier layer 22 are respectively provided with a first microstructure 31 and a second microstructure 32. In this embodiment, the first microstructure and the second microstructure are hemispheres. The shape, in other embodiments, may also be a microstructure including one or a combination of isosceles triangles, polygonal pyramids, cones, hemispheres, and irregular shapes with convex structures on the surface.
[0080] The quantum dot layer and the water vapor barrier layer in this embodiment are the same as those in the first embodiment, and will not be repeated here.
[0081] Correspondingly, the backlight module in another embodiment of the present invention includes: a light source, a light guide plate, a prism sheet, and a quantum dot film, wherein the quantum dot film is located anywhere on the light guide plate and below the prism sheet. The quantum dot film is fabricated with a prism structure on one or both sides, which can combine light collection, conversion, brightness enhancement and diffusion, reducing the thickness of the backlight module.
[0082] It can be seen from the above technical solutions that compared with the prior art, the present invention has the following beneficial effects:
[0083] The invention can increase the optical path of light passing through the quantum dot layer, improve the utilization rate of the quantum dot, improve the light conversion efficiency, and reduce the cost;
[0084] The invention can provide three effects of light conversion and fogging and brightening, and can reduce the thickness of the backlight module.
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PUM

PropertyMeasurementUnit
Diameter0.1 ~ 20.0µm
Diameter1.0 ~ 15.0µm
Diameter1.0 ~ 10.0nm
tensileMPa
Particle sizePa
strength10

Description & Claims & Application Information

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