Array substrate, preparation method and display device
A technology for array substrates and common electrodes, applied in the fields of array substrates, display devices, and preparations, can solve the problems of low electrical conductivity and weak power supply capacity of the common electrodes 20, achieve uniform voltage distribution, improve quality levels, and improve image display quality Effect
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Embodiment 1
[0056] Such as figure 2 As shown, an array substrate, the array substrate includes a non-pixel area 2 distributed in a grid and a plurality of sub-pixel areas 1 formed surrounded by the non-pixel area, the non-pixel area is provided with a plurality of intersecting Scanning lines 12 and data lines 16, above the sub-pixel area 1 and the non-pixel area 2 are provided with a common electrode, the thickness of the area of the common electrode corresponding to the sub-pixel area 1 is the first thickness, the The thickness of the region of the common electrode corresponding to the scan line 12 and / or the data line 16 is a second thickness, and the first thickness is smaller than the second thickness. That is, in this embodiment, the thickness of the area of the common electrode 20 corresponding to the scan line is greater than the thickness of the area corresponding to the sub-pixel region 1, or, the common electrode 20 corresponds to the area of the data line The thickness ...
Embodiment 2
[0102] The difference between this embodiment and Embodiment 1 is that, in this embodiment, the common electrode 20 in the array substrate is formed of two different materials, that is, the common electrode 20 is in the area corresponding to the scanning line and / or the data line The protruding thickness portion corresponding to the sub-pixel region 1 is formed of a material with higher conductivity.
[0103] Specifically, the common electrode 20 is made of indium gallium zinc oxide, indium zinc oxide, oxide Formed from at least one material among indium tin and indium gallium tin oxide; the common electrode 20 adopts At least one material selected from molybdenum, molybdenum niobium alloy, aluminum, aluminum neodymium alloy, titanium and copper.
[0104] Correspondingly, the method for preparing the array substrate of this embodiment specifically includes the following steps:
[0105] Step S600): forming other layers of the array substrate except the common electrode.
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Embodiment 3
[0124] The difference between this embodiment and Embodiments 1 and 2 is that, in the array substrate of this embodiment, an organic film layer (Organicfilm) is further included between the source electrode, the drain electrode, and the pixel electrode.
[0125] In this embodiment, the organic thin film layer is formed of a resin material containing a photosensitive material, and the thickness of the organic thin film layer is 2-4 μm (thicker than that of the passivation layer). The organic thin film layer is formed above the source electrode and the drain electrode, and a via hole is opened in a region corresponding to the drain electrode, and the drain electrode is electrically connected to the pixel electrode through the via hole.
[0126] Correspondingly, the preparation method of the array substrate in this embodiment is: gate electrode deposition (GateDeposition) → using a common mask to form a gate electrode through a patterning process (Mask, Develop, Etch) → gate insul...
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Abstract
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