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Method for manufacturing thin film transistor array substrate

A technology for thin film transistors and array substrates is applied in the field of manufacturing thin film transistor array substrates, which can solve the problems of high production cost and low production efficiency, and achieve the effects of increasing production capacity, improving production efficiency, and improving line scanning rate.

Active Publication Date: 2015-07-01
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, at present, thin film transistors made of oxide semiconductor IGZO are mainly manufactured using 6 masks (6 masks), which has low production efficiency and high production costs.

Method used

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  • Method for manufacturing thin film transistor array substrate
  • Method for manufacturing thin film transistor array substrate
  • Method for manufacturing thin film transistor array substrate

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Embodiment Construction

[0045]In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0046] see Figure 1 to Figure 15 , The present invention provides a method for manufacturing a thin film transistor array substrate. The thin film transistor array substrate adopts a top gate structure. The method only uses three masking processes, which effectively reduces production costs, improves production efficiency, and increases production capacity.

[0047] The manufacturing method of the thin film transistor array substrate specifically includes the following steps:

[0048] Step 1, providing a substrate 21 .

[0049] In this embodiment, the substrate 21 is preferably a glass substrate, but it is not limited thereto, and substrates of other materials, such as plastic, may also be used.

[0050] Step 2, sequentially depositing and f...

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Abstract

The invention provides a method for manufacturing a thin film transistor array substrate. The thin film transistor array substrate adopts a top gate structure. The method for manufacturing the thin film transistor array substrate uses three masks to manufacture a TFT array substrate. Manufacturing thin film transistors in the thin film transistor array substrate can greatly increase the charging rate of the thin film transistors to the pixel electrodes, improve the response speed of the pixels, and achieve a faster refresh rate. At the same time, the faster response also greatly improves the row scanning rate of the pixels. It makes ultra-high resolution possible in thin-film transistor liquid crystal displays; at the same time, this manufacturing method only uses three masking processes, which can significantly reduce process steps, shorten process time, effectively reduce production costs, improve production efficiency, and increase production capacity.

Description

technical field [0001] The invention relates to the field of manufacturing liquid crystal displays, in particular to a method for manufacturing a thin film transistor array substrate using a three-time mask. Background technique [0002] Nowadays, with the vigorous development of science and technology, the types of information products are introduced to meet the different needs of the public. Most of the early monitors were Cathode Ray Tube (CRT) monitors. Due to their bulky size and high power consumption, the radiation produced was harmful to the health of users who used the monitors for a long time. Therefore, the displays on the market today will gradually be replaced by liquid crystal displays (Liquid Crystal Display, LCD). [0003] Liquid crystal displays have many advantages such as thin body, power saving, and no radiation, and have been widely used. Most of the liquid crystal displays currently on the market are backlight liquid crystal displays, which include a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77H01L29/786H01L29/423H01L29/24
CPCH01L27/1225H01L27/1288H01L29/24H01L29/42384H01L29/66969H01L29/7869H01L21/02164H01L21/0226H01L21/02565H01L21/441H01L21/47573H01L21/477H01L27/1262H01L27/127H01L29/41733
Inventor 王俊
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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