Compound semiconductor wafer structure

Abstract

The invention relates to a compound semiconductor wafer structure. The compound semiconductor wafer structure comprises a substrate, an n-type field effect transistor expitaxy structure, an n-type adulteration erosion stopping layer, a p-type inserting layer and an npn heterojunction bipolar transistor expitaxy structure, and can be used for manufacturing a field effect transistor or a heterojunction bipolar transistor or a thyristor.

Description

technical field [0001] The present invention relates to a compound semiconductor wafer structure, in particular to an integration of a heterojunction bipolar transistor (heterojunction bipolar transistor; HBT), a field effect transistor (field effect transistor; FET) and an AND gate transistor (Thyristor) The epitaxial structure is on a single wafer, which can be applied to the compound semiconductor wafer structure of the Electrostatic Discharge (ESD) system. Background technique [0002] When the human body touches the integrated circuit, the static electricity accumulated on the human body will enter the circuit through the pins of the integrated circuit, and then discharge through the ground of the integrated circuit. The discharge process will generate a few amperes in just a few hundred nanoseconds (ns). Current may cause abnormal function or damage of integrated circuit components. Therefore, it is usually necessary to design an electrostatic protection system in inte...

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Problems solved by technology

[0003] In the compound semiconductor single wafer process, limited by the design of the epitaxial layer, in the design of electrostatic protection, pn junction diodes or Schottky diodes (Schottky diodes) are traditionally used. In practical applications, usually Fabricate multiple diodes on the wafer first, and then use these diodes in series, so it needs to occupy a large wafer area, and the conduction voltage of the diode is small, so the electrostatic protection capability is limited

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