Plasma reaction chamber and plasma device with same

Abstract

The invention discloses a plasma reaction chamber. The plasma reaction chamber comprises a cavity body, a static clamping disk, a heater and a medium window, wherein the cavity body is provided with a cavity chamber, the static clamping disk is arranged inside the cavity body to be used for bearing a substrate, the heater is arranged on the cavity body to be used for heating the cavity body, the medium window is arranged at the upper end of the cavity body to be used for sealing a top opening of the cavity chamber, and a heated fluid channel is formed inside the medium window. According to the plasma reaction chamber, due to the fact that the heated fluid channel is arranged and heated liquid is led into the channel to conduct heat exchange with the medium window, therefore, quick and even temperature rising to the medium window is realized, and the etching efficiency and the etching effect of the plasma reaction chamber are greatly improved. The invention further discloses a plasma device.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment manufacturing, in particular to a plasma reaction chamber and a plasma device with the same. Background technique [0002] Plasma devices are widely used in the fabrication processes of integrated circuits (ICs) or MEMS devices. One notable application is the Inductive Coupled Plasma (ICP) device. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. These active particles interact with the substrate to cause physical and chemical reactions on the material surface, thereby changing the properties of the material surface. [0003] During the etching process, the temperature of the plasma reaction chamber must be strictly controlled, because the etching process effect is highly sensitive to the temperature fluctuation in the plasma reaction chamber, which directly affects the uniformity of the etching rate, and the te...

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Problems solved by technology

[0004] In an existing plasma reaction chamber, the temperature control of the reaction chamber cavity is realized by setting a heater, a thermocouple and an over-temperature switch on the side wall. The temperature of the electrostatic chuck in the reaction chamber is controlled by a temperature control module, but located at The dielectric window on the top of the reaction chamber does not have a separate temperature control system, and the effect of the etching process has obvious requirements on the temperature of the dielectric window. Therefore, the temperature control of the dielectric window can generally be achieved by increasing the plasma ignition process.

However, the above-mentioned plasma reaction chamber has the following disadvantages: 1) The quartz window that plays a coupling role has no independent temperature control, and the temperature of the quartz window can only be obtained by intermittent heating of plasma ignition, which is very unstable. And the step of plasma ignition must be added in the process, otherwise stable process results cannot be obtained; 2) Adding the step of plasma ignition will inevitably prolong the time of the single-chip process, thereby greatly reducing the output rate of the entire equipment ; 3) There is no independent temperature sensor for the quartz window, so it is difficult to realize automatic temperature control; 4) Whe

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