Method for manufacturing semiconductor device preventing metal silicide bridging

Abstract

The invention provides a manufacturing method of a semiconductor device for preventing metal silicide bridge. The method comprises the steps of forming a trench in a hard mask layer, sequentially forming a first flank wall and a second flank wall on the side wall of the trench, removing the hard mask layer and carrying out a pullback process on the first flank wall to form a gate structure which has a wide upper part and a narrow lower part. Therefore, in the follow-up metallization process, a deposited metal material layer cannot stay on a portion of the side wall of the gate structure. As spaced metal material layers are formed on a gate layer and a semiconductor substrate, diffusion of the metal material layer in the gate layer is effectively avoided so as not to cause the problem that source and drain regions in the gate structure and the semiconductor substrate are conducted, the problem of metal silicide bridge is prevented, the occurrence of failure of the semiconductor device is reduced, and the yield of the semiconductor device is improved.

Description

technical field [0001] The invention relates to an integrated circuit manufacturing method, in particular to a semiconductor device manufacturing method for preventing metal silicide bridging. Background technique [0002] As the integration of semiconductor devices becomes higher and higher, the voltage and current required for the operation of semiconductor devices continue to decrease, and the switching speed of transistors is also accelerated, and the requirements for various aspects of semiconductor technology have been greatly increased. The prior art process has made transistors and other types of semiconductor device components as thick as several molecules and atoms, and the materials that make up semiconductors have reached the limit of physical and electrical characteristics. [0003] The industry has proposed a material with a higher dielectric constant and better field effect characteristics than silicon dioxide - High-K Material, which is used to better separat...

AI Technical Summary

Problems solved by technology

[0006] However, when the metal material layer is deposited on the gate, the diffusion effect of the metal material layer along the horizontal direction in the gate sidewall becomes more and more obvious as the width of the gate sidewall continues to decrease, which easily causes the gate The connection with the source and drain regions forms a metal silicide bridge (Silicide Bridge) problem, which in turn causes the failure of semiconductor devices

Images