Double-gate fin-type field effect transistor and manufacturing method thereof

Abstract

The invention discloses a double-gate fin-type field effect transistor including a bottom gate, a first dielectric layer on the bottom gate, two bottom contacts at the top part of the first dielectric layer, a fin-type adjustable channel layer on the first dielectric layer and the bottom contacts, a source electrode and a drain electrode, which are formed at positions of the fin-type adjustable channel layer, corresponding to the two bottom contacts, an insulator formed on the fin-type adjustable channel layer and between the source electrode and the drain electrode, a second dielectric layer formed on the insulator and a top gate on the second dielectric layer and a manufacturing method thereof. The double-gate fin-type field effect transistor is provided with the adjustable channel layer, capable of carrying out switch conversion greatly, providing greater channel charge control capability and faster drive current, reducing a short-channel effect and improving performances of contact resistance of a device and the like.

Description

technical field [0001] The present invention relates to the field of semiconductor technology, more precisely, the present invention relates to a double-gate fin field effect transistor and a manufacturing method thereof. Background technique [0002] Graphene is derived from graphite, and its carrier mobility at room temperature is 100 times faster than that of silicon materials, but at the same time, because it is a semiconductor with zero band gap, that is, there is no energy gap between its valence band and conduction band, so if To make semiconductors from this material, then the zero bandgap means that the current switching control of graphene material semiconductors cannot. Solutions to this problem proposed in the prior art include using nanoribbons, quantum dots or chemical methods to modify the graphene material itself to have semiconducting properties. These methods can generally solve the above-mentioned problems, but using these methods to open a band gap in th...

AI Technical Summary

Problems solved by technology

Using this method to form a graphene layer has the disadvantages that the thickness is not easy to control, the measurement is difficult, and the yield is not high.

In addition, the structure of graphene semiconductor with only one top contact in the prior art will also limit the performance of the device

[0004] In the current semiconductor manufacturing process, there is no way to overcome the above problems

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