A kind of igbt device and its manufacturing method with enhanced switching speed and switching uniformity
A technology of switching speed and uniformity, applied in the field of power devices and their manufacturing, can solve the problems of poor switching uniformity, slow switching speed of IGBT devices, and speed up the transmission speed of gate voltage, so as to reduce switching loss, realize simple structure, and improve Effects of switching speed and switching uniformity
Active Publication Date: 2016-09-21
STATE GRID CORP OF CHINA +2
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Problems solved by technology
[0009] For the deficiencies in the prior art, the purpose of the present invention is to provide a kind of IGBT device that enhances switching speed and switching uniformity, and another purpose is to provide the manufacturing method of the IGBT device that strengthens switching speed and switching uniformity, the present invention passes Gate Finger The aluminum lead directly transmits the gate voltage on the gate PAD to the aluminum lead in the gate Bus area, which speeds up the transmission speed of the gate voltage, and simultaneously transmits the voltage to the cells in each emitter PAD area 01 from four sides, reducing the The turn-on or turn-off time of the IGBT reduces the turn-on or turn-off loss, improves the uniformity of the IGBT switch, and solves the problem of slow switching speed and poor switch uniformity of the IGBT device
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Embodiment 1
[0052] Embodiment 1 (with figure 2 Take the generation process of the cross-sectional diagram of the dotted line AB as an example)
[0053] The present invention also provides a method for manufacturing an IGBT device with enhanced switching speed and switching uniformity, comprising the following steps:
[0054] (1) A thin oxide layer is grown on the uniformly doped N-type substrate 11 as a barrier layer, and after processes such as coating, exposure, development, and deglue, the field-limiting ring P-Ring12 doped in the terminal area is engraved The window is P-Ring doped by ion implantation. After the same process, the N-Ring13 doping of the field limiting ring in the terminal area is carried out, such as Figure 4 shown.
[0055] (2) Field oxide layer 14: use high temperature oxidation method to grow a thick oxide layer on the surface of the silicon wafer, use the field oxide layer photolithography plate, go through glue coating, exposure, development, oxide film etchi...
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The invention relates to a power device and a manufacturing method thereof, in particular to an IGBT device with enhanced switching speed and switching uniformity and a manufacturing method thereof. The IGBT device includes an emitter PAD area, a gate PAD area, a gate Finger area, a gate Bus area and a terminal area. The gate PAD area is located at the center of the device, the emitter PAD area is distributed around the gate PAD, the gate Finger area separates the emitter PAD area, the gate Bus area surrounds the emitter PAD area, and the terminal area is located outside the gate Bus area. The invention improves the structure design of the traditional polysilicon layer and the metal layer, so that the charging and discharging speed of the IGBT device to the cell gate is accelerated during the switching process, thereby increasing the overall switching speed of the IGBT device. Compared with the traditional IGBT device structure, the invention accelerates the switching speed of the IGBT and simultaneously improves the uniformity of the IGBT cell switching process.
Description
technical field [0001] The invention relates to a power device and a manufacturing method thereof, in particular to an IGBT device with enhanced switching speed and switching uniformity and a manufacturing method thereof. Background technique [0002] PAD area: The window opened on the passivation layer of the chip. When packaging, wires are welded on it, connected to the pins, and the potential is drawn out. Specifically, there are gate PAD area and emitter PAD area. [0003] Gate Bus area: In order to ensure that the edge cells are turned on or off at the same time, the edge cells are usually surrounded by a metal ring, and then the gate potential is transmitted through polysilicon. [0004] Gate Finger area: In order to reduce the influence of the distributed resistance of the gate electrode material, polysilicon and metal are usually used to lead the gate potential to the cell unit far away from the gate PAD. [0005] IGBT (Insulated Gate Bipolar Transistor), that is, ...
Claims
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IPC IPC(8): H01L29/739H01L23/49H01L23/498H01L29/06H01L21/331H01L21/48
CPCH01L24/05H01L2224/05552H01L2924/1305H01L2924/13055H01L2924/13091
Inventor 何敏高文玉刘江吴迪王耀华刘隽凌平包海龙张宇
Owner STATE GRID CORP OF CHINA