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Memory device based on sulphonated graphene/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) composite materials and preparation method thereof

A technology of ethylenedioxythiophene and sulfonated graphene, which is applied in the fields of new materials, organic memory and microelectronics, can solve problems such as easy aggregation, and is beneficial to large-scale production, reducing pollution, ensuring repeatability and The effect of stability

Inactive Publication Date: 2014-02-19
JINGMEN XIONG XING CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the mutual attraction between the graphene material nanosheets, it is extremely prone to aggregation

Method used

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  • Memory device based on sulphonated graphene/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) composite materials and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] 1) According to the literature report, sulfonated graphene was prepared by chemical reduction, sulfonation, reduction and other steps in sequence (Nano Letters, 2008, 8, 1679-1682);

[0020] 2) Add sulfonated graphene to poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) aqueous solution, and ultrasonically disperse for 50 minutes to obtain sulfonated graphene / poly(3,4-sulfonic acid) Aqueous solutions of ethylenedioxythiophene)-poly(styrenesulfonic acid) composites, sulfonated graphene in sulfonated graphene / poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) The weight ratio in the composite material is 0.15%;

[0021] 3) Spin-coat the aqueous solution of the composite material on the lower electrode of the ITO conductive glass at a speed of 5000 rpm for 40 seconds, and then dry the ITO conductive glass with the composite material on the surface at 100 degrees for 15 minutes. A composite material with a thickness of 70nm was obtained;

[0022] 4) On ...

Embodiment 2

[0026] 1) Same as Step 1 of Example 1;

[0027] 2) Add sulfonated graphene to poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) aqueous solution, and disperse it ultrasonically for 30 minutes to obtain sulfonated graphene / poly(3,4-sulfonic acid) Aqueous solutions of ethylenedioxythiophene)-poly(styrenesulfonic acid) composites, sulfonated graphene in sulfonated graphene / poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) The weight ratio in the composite material is 0.18%;

[0028] 3) Spin-coat the aqueous solution of the composite material on the flexible PET polyester film with indium oxide doped tin on the surface of the lower electrode at a speed of 3000 rpm, and the spin-coating time is 30 seconds, and then spin-coat the surface with the composite material A flexible PET polyester film doped with indium oxide and tin was evaporated and dried at 100 degrees for 15 minutes to obtain a composite material with a thickness of 82 nm;

[0029] 4) On the surfa...

Embodiment 3

[0032] 1) Same as Step 1 of Example 1;

[0033] 2) Add sulfonated graphene to poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) aqueous solution, and ultrasonically disperse for 45 minutes to obtain sulfonated graphene / poly(3,4-sulfonic acid) Aqueous solutions of ethylenedioxythiophene)-poly(styrenesulfonic acid) composites, sulfonated graphene in sulfonated graphene / poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) The weight ratio in the composite material is 0.25%;

[0034] 3) The aqueous solution of the composite material is spin-coated on the lower electrode of metal aluminum at a speed of 4500 rpm for 60 seconds, and then the metal aluminum with the composite material spin-coated on the surface is dried at 100 degrees for 10 minutes to obtain a thickness 90nm composite material;

[0035] 4) On the metal aluminum that has been spin-coated, a metal aluminum with a thickness of 200nm is obtained by thermal evaporation as the upper electrode material, t...

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Abstract

The invention discloses a memory device based on sulphonated graphene / poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) composite materials and a preparation method of the memory device. The memeory device is composed of a bottom electrode, a middle electroactive memory layer and a top electrode, wherein the middle electroactive memory layer of the memory device is made of the sulphonated graphene / poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) composite materials which pin-coat the bottom electrode, and the top electrode is deposited on the electroactive memory layer. By regulating and controlling the content of sulphonated graphene in the composite materials, the ratio of the threshold voltage to the switching current of the memory device based on the sulphonated graphene / poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) composite materials can be regulated and controlled. The memory device is simple in manufacturing process and gentle in experiment condition.

Description

technical field [0001] The invention relates to a memory storage device based on sulfonated graphene / poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) composite material and a preparation method thereof, belonging to new materials, organic memory and field of microelectronics. Background technique [0002] With the development needs of mobile terminals, the market for storage devices and the storage capacity of storage devices are increasing. Common memory devices are generally constructed using inorganic oxide semiconductor materials, which reduce production costs and increase storage capacity by reducing the size of transistors. However, due to the quantum tunneling effect, the manufacturing process of inorganic oxide semiconductor materials is becoming more and more complex, and the cost is gradually increasing. Because organic polymer materials have the advantages of controllable molecular structure, bendability, easy processing, and low cost, they have becom...

Claims

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Application Information

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IPC IPC(8): H01L27/28
Inventor 赵睿李亮喻湘华张桥吴艳光
Owner JINGMEN XIONG XING CHEM CO LTD