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Preparation method of nanometer grid structure in vertical direction

A nanogrid and vertical technology, applied in nanotechnology, nanotechnology, microstructure technology, etc., can solve the problem of inability to prepare vertical nanogrids, and achieve the effect of simple operation and strong controllability

Active Publication Date: 2014-03-05
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing a vertical nano-grid structure. The present invention uses electron beam lithography to define nano-scale lines and realizes a vertical nano-grid structure through DRIE etching, which solves the problem that the prior art cannot prepare width Problems of 50-800nm ​​Vertical Structure Nanogrid

Method used

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  • Preparation method of nanometer grid structure in vertical direction
  • Preparation method of nanometer grid structure in vertical direction
  • Preparation method of nanometer grid structure in vertical direction

Examples

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Embodiment 1

[0026] Embodiment 1, the preparation of the nanogrid structure (fence shape) of vertical direction

[0027] (1) Prepare a 4-inch single-sided polished single-crystal silicon wafer, and grow a layer of SiO with a thickness of about 100nm on the surface of the silicon wafer by CVD (250mtorr pressure) 2 film.

[0028] (2) Spray glue (≈1.5um, Suzhou Ruihong AZ601) on the surface of a silicon wafer (4 inches, 525 micron thickness), and then go through pre-baking (98°C, 15min), exposure (10s), post-baking (80 ℃, 20min) and developing (Suzhou Ruihong photoresist AZ601 matching developer solution 1min), to obtain the required alignment mark pattern, such as figure 2 shown.

[0029] (3) Electron beam exposure is carried out through the defined alignment mark pattern (the acceleration voltage is 80kV, the electron beam current is 2.0nA, the aperture is 30μm, the beam spot size is 3, and the exposure dose is 250μC / cm 2 , the lithography layout is as Figure 4 As shown, lines with wi...

Embodiment 2

[0032] Embodiment 2, the preparation of the nanogrid structure of vertical direction

[0033] The method and steps prepared in Example 1 are the same, the difference is that the electron beam lithography alignment mark pattern is not the same, finally obtained as follows Figure 5 The nanomesh structure of the e-beam lithography layout shown.

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Abstract

The invention discloses a preparation method of a nanometer grid structure in the vertical direction. The preparation method includes the following steps that firstly, a SiO2 thin film is grown on the surface of a Si substrate through a chemical vapor deposition method; secondly, the SiO2 thin film is coated with photoresist in a spinning mode, the photoresist is sequentially prebaked, exposed, postbaked and developed, and then an electron beam lithography alignment mark graph is formed on the SiO2 thin film; thirdly, electron beam exposure is conducted according to the electron beam lithography alignment mark graph to acquire nanometer-level lines; fourthly, the SiO2 thin film is etched, and then nanometer-level lines are acquired on the SiO2 thin film; fifthly, deep reactive ion etching is conducted on the Si substrate, and then the nanometer grid structure in the vertical direction is acquired. Through the electron beam lithography and DRIE methods, the nanometer grid structure in the vertical direction can be prepared through a traditional integrated circuit processing method for the first time. The preparation method has the advantages of being simple in operation and high in controllability.

Description

technical field [0001] The invention relates to a preparation method of a vertical nano-grid structure. Background technique [0002] In the existing micro-nano structure processing methods, Deep Reactive-Ion-Etching (DRIE) technology is often used for deep etching processing. In the DRIE etching method, chemical etching is first performed, and chemical etching gas ions bombard the substrate and react with the substrate to generate volatile gases. Since the etching substance is a gas, a lateral undercut phenomenon to the inside of the substrate will be formed. Then, a protective gas is applied, which will form a protective film on the surface of the etching process (including the bottom surface and the side of the lateral undercut) just now, preventing the etching gas from chemically reacting with the substrate again. After that, chemical etching is performed again. Due to the bombardment effect of etching gas ions, the protective film on the bottom surface will be bombar...

Claims

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Application Information

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IPC IPC(8): H01L21/02B82Y10/00B82Y40/00
CPCB81C1/00031B82Y10/00B82Y40/00
Inventor 吴文刚张凯马鹏程王诣斐
Owner PEKING UNIV