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A gridded polysilicon micro-nano processing device and method

A micro-nano processing, polysilicon technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problems of unfavorable promotion and application, battery open circuit voltage and fill factor reduction, high cost, and optimize the polysilicon surface. Microstructure, improve photoelectric conversion efficiency, improve the effect of anti-reflection effect

Active Publication Date: 2016-05-04
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem of laser suede production is that the surface is damaged during etching and some impurities are introduced at the same time, and the surface damage layer must be removed by chemical treatment.
From an optical point of view, it is an ideal method, but the problem is that the silicon surface is seriously damaged, the open circuit voltage and fill factor of the battery decrease, and the process is complicated.
However, this kind of technology is complicated, and when it is applied to industrial production, the cost is very high, which is not conducive to widespread application

Method used

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  • A gridded polysilicon micro-nano processing device and method
  • A gridded polysilicon micro-nano processing device and method
  • A gridded polysilicon micro-nano processing device and method

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Embodiment Construction

[0032] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0033] like figure 1 As shown, a gridded polysilicon micro-nano processing device includes a control device, a planar supergene generation device and a reaction device.

[0034] The control device includes an ultrasonic generator controller 1 and a camera 2 , and the input ends of the two ultrasonic generator controllers 1 and the camera 2 are connected to a computer 3 . The camera head of camera 2 faces the reaction device.

[0035] like figure 1 , 2-1 As shown in and 2-2, the planar ultrasonic generating device includes a transducer 4, a horn 5, and a planar ultrasonic tool head 6; the output end of each ultrasonic generator controller 1 is connected with the tail of a transducer 4, each The head of each transducer 4 is screwed to the tail of a horn 5, and the head of each horn 5 is screwed to the tail of a planar ultrasonic tool head 6.

[0036]...

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Abstract

The invention discloses a micro-nanometer machining device and method of meshed polycrystalline silicon. The effect of an antireflection layer used for preparation of a polycrystalline silicon solar cell at present is poor. According to the micro-nanometer machining device, the output end of each ultrasonic generator controller is connected with the tail portion of an amplitude-change pole in a threaded mode through an energy converter. The head portion of each amplitude-change pole pile is connected with the tail portion of a plane ultrasonic tool head in a threaded mode. The head portion of each plane ultrasonic tool head extends into a reaction observation room. The inner side walls, opposite to the plane ultrasonic tool heads respectively, of the reaction observation room are respectively provided with a sound wave reflecting plate in a fixed mode. A reaction container is arranged in the reaction observation room. The micro-nanometer machining method of the polycrystalline silicon comprises the steps that mixed acidizing fluid is poured into the reaction container, the plane ultrasonic tool heads are driven to form ultrasonic standing waves, a polycrystalline silicon material is placed in the reaction container to conduct preparation, the prepared polycrystalline silicon is placed in a deionizing solution to be washed, and packaging is conducted. By the adoption of the micro-nanometer machining device and method of the meshed polycrystalline silicon, the antireflection effect of the surface of the polycrystalline silicon can be improved, and therefore the photoelectric converting efficiency of the polycrystalline silicon solar cell is improved.

Description

technical field [0001] The invention belongs to the field of new solar energy and relates to the processing and production of polycrystalline silicon photovoltaic panels, in particular to a gridded polycrystalline silicon micro-nano processing device and method. Background technique [0002] New energy has become one of the important fields of research in the 21st century, and the application and popularization of solar energy has been highly valued by people. The energy of the sun is very rich, and the energy irradiated on the earth every second is equivalent to 5 million tons of standard coal. If converted into electrical energy, it is about 3.8×10 19 MW, solar energy does not contain harmful substances, does not emit carbon dioxide, has great development prospects, and is an effective way for mankind to solve the current energy crisis. Until the 1990s, solar photovoltaic materials were mainly monocrystalline silicon. In the 1980s, the application of polycrystalline sili...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L21/02052H01L21/02057Y02P70/50
Inventor 吴立群蔡耀中巢炎杨贤龙王亚星
Owner HANGZHOU DIANZI UNIV