45results about How to "Reduce etching costs" patented technology

The present etching system includes a processing tank with an etching solution containing silicon, a cooling tank, a pre-heating tank, a first pipe for transferring the etching solution from the processing tank to the cooling tank, a second pipe for transferring the etching solution from the cooling tank to the pre-heating tank, and a third pipe for transferring the etching solution from the pre-heating tank to the processing tank. The present method for treating the etching solution first performs an etching process using the etching solution, which is then cooled to a first temperature to form a silicon-saturated etching solution. After silicon-containing particles larger than a predetermined size are filtered out, the silicon-saturated etching solution is heated to a second temperature to form a non-saturated etching solution for performing another etching process later. The second temperature is preferably at least 10° C. higher than the first temperature.

The invention relates to an organic light-emitting display apparatus and a preparation method thereof. The preparation method comprises the steps of providing a substrate; forming a positive electrodelayer on the substrate; forming an organic light-emitting layer on the positive electrode layer; forming a negative electrode layer on the organic light-emitting layer; removing a part of the negative electrode layer and a part of the organic light-emitting layer which are corresponding to an opening in the substrate through etching by adopting a plasma bombardment mode through the opening of a mask plate; providing a cover plate with an outer layer glass material and an inner layer glass material; enabling the substrate to be laminated with the cover plate, and performing sintering on the outer layer glass material and the inner layer glass material to form an outer layer packaging layer and an inner layer packaging layer, and enabling the substrate and the cover plate to be connected ina sealing manner; and performing hole punching on the substrate and the cover plate in the inner layer packaging layer to form the organic light-emitting display apparatus with holes. By virtue of the plasma bombardment mode, more efficient organic material etching can be realized, and higher production efficiency and higher etching precision are achieved; and in addition, scalding to a pixel region can be avoided, the etching cost can be lower and the production cost can be lowered effectively.

The invention discloses a wet etching method for a ZnO-based transparent conductive film The wet etching method comprises the following steps: coating photoresist on a substrate deposited with the ZnO-based transparent conductive film; carrying out exposure and development and removing part of the photoresist so that the substrate to be etched is exposed; baking the substrate; proportioning with weak acids and deionized water to form a weak acid solution; putting the substrate to be etched into the weak acid solution for etching for 1-10000 seconds; washing with deionized water; removing the photoresist with an organic solution; and measuring the etching depth and the profile of the etched pattern. A weak acid solution wet etching process is adopted in the method, and the method has the advantages of simple operation, low cost, controllable etching rate, high etching precision and the like, and can be applied to a pattern processing technology of ZnO-based transparent electrodes in the fields of solar batteries, panel display, LEDs (light-emitting diodes) and the like, so that the industrial applications of the ZnO-based transparent conductive films the above fields are promoted.

The invention discloses a 3D memory device and a manufacturing method thereof. The manufacturing method comprises the steps: forming a first laminated structure on a substrate, wherein the first laminated structure comprises a plurality of interlayer insulating layers and gate conductor layers which are stacked alternately, and the first laminated structure is provided with a first step structure;forming a first filling layer covering the first step structure and the substrate; forming a second laminated structure covering the first laminated structure, the second laminated structure comprising a plurality of interlayer insulating layers and gate conductor layers which are alternately stacked, the second laminated structure having a second step structure; and forming a plurality of firstvirtual channel columns, wherein at least a part of the first virtual channel columns are located in the second step structure, and the top surface of at least one first virtual channel column is thestep surface of the second step structure. According to the manufacturing method, the top surface of the virtual channel column and the step surface of the step structure are coplanar, so that the problem of poor flatness of the device is solved.

The invention provides a method for manufacturing a high-power high-reflectance COB substrate and light source. The method comprises the following steps that a transparent substrate body is provided; light sensitive films are formed in the two sides of the transparent substrate body; exposure developing is carried out on the light sensitive films on the two sides of the transparent substrate body, and the appearance frame lines of a product on the transparent substrate body are exposed out; the penetrating step is carried out on the appearance frame lines of the product on the transparent substrate body; the light sensitive films are removed; mirror face reflecting layers are formed on the bottom face and the side faces of the transparent substrate body after the light sensitive films are removed; a circuit layer is printed and sintered on the front face of the transparent substrate body after the light sensitive films are removed and a crystal solidification area is arranged on the front face of the transparent substrate body; a weld line area and an electrode are formed on the circuit layer; insulation oil is printed on the other parts, except for the crystal solidification area, the weld line area and the electrode, of the front face of the transparent substrate body. The method for manufacturing the high-power high-reflectance COB substrate and light source can greatly improve the reflecting capacity of the COB substrate or light source, light efficiency is improved, and energy conservation and environment protection are achieved.

The present disclosure provides an etching mask, a method for manufacturing the same, a method for manufacturing a porous membrane using the same, a porous membrane, a fine dust blocking mask including the same, and a method for manufacturing a surface enhanced Raman scattering active substrate. In this connection, the etching mask includes an organic film; and a pattern layer disposed on the organic film, wherein the pattern layer has openings defined therein having a uniform size, wherein each of the openings includes a micro-scale or nano-scale hole.

The invention discloses an etching solution recycling device, which comprises a gantry (1) and an etching tank (2) arranged below the cross beam of the gantry (1), wherein a lifting oil cylinder (3) is fixedly mounted at the top of the cross beam of the gantry (1), a lifting plate (4) is welded at the acting end of the piston rod of the lifting oil cylinder (3), the lower end portion of a hollow pipe (5) penetrates through the cross beam, a bearing disc (6) positioned right above the etching tank (2) is welded at the extending end, a plurality of bearing tables (8) distributed in an array modeare welded to the top of the bearing disc (6), a longitudinally-formed groove (9) is formed in the top of each bearing table (8), a circuit board (10) is inserted into each groove (9), and nozzles (11) located on the bearing disc (6) are arranged on the left side and the right side of each bearing table (8). The etching solution recycling device has the beneficial effects that the structure is compact, the etching efficiency is greatly improved, the etching cost is greatly reduced, and the operation is simple.

The invention relates to a wet etching method for isotropically etching nitride materials. The method comprises the steps of: coating a photoresist on the surface of GaN, and photoetching and etchinga pattern; evaporating a layer of metal on the photoetching substrate; performing metal stripping, and removing the residual photoresist; then putting the treated GaN into corrosive solution for corrosion; and finally, immersing the etched epitaxial wafer sample into a diluted nitric acid solution to remove surface metal. The method is high in etching speed, low in etching cost and simple in process, and the surface of the etched GaN is flat, the etched pattern can be automatically regulated and controlled according to the requirement.

The invention discloses a higher-order high-density circuit board copper plating technology. According to a step of copper plating, a to-be-plated circuit board is placed in a coating bath, the temperature in the coating bath is controlled between 30-40 DEG C, the electroplating current is 1.2A/dm<2>-3A/dm<2>, and the electroplating time is 10-20 min; after the step of copper plating is completed,a blower fan blows a plating solution attach to the surface of the circuit board, the plating solution falls to the coating bath, and the plating solution is saved, after the above step, a brighteneris sprayed at the surface of the circuit board by workers, so that the surface of the circuit board is smooth and clean, and during a brightener sprinkling process, the surface of the circuit board is uniformly smeared with the brightener. The higher-order high-density circuit board copper plating technology has the beneficial effects that the etching cost is saved, the plating solution is recycled, and the copper plating quality is high.

The invention relates to a copper extraction and cyclic regeneration technology of alkaline etching waste liquid. The copper extraction and cyclic regeneration technology comprises the steps that (1)cupric ions in the alkaline etching waste liquid are converted into metal copper to be extracted through the damage-free separation direct electrolysis technology; (2) impurities in the etching liquidare filtered out through a filter; and (3) the alkaline etching waste liquid is adjusted to the qualified alkaline etching liquid through solution proportioning. According to the technology, a closedcycle is adopted, in the whole process, no other foreign substances are introduced, no hazardous substances are generated, solution compositions cannot be destroyed, the technical problems of accumulation of impurities in etching tanks and the like with which all kinds of regeneration cyclic etching liquid are faced during long-time operation are solved well, and the cyclically-regenerated etching liquid can compare favorably with newly-prepared etching liquid.

The invention discloses a manufacturing method for a roughened transparent conducting base plate, which mainly comprises the following steps: depositing a transparent conducting layer on a transparent base plate and covering the transparent conducting layer on one surface of the transparent base plate; and graving patterns through a laser source and roughening the surface of the transparent conducting layer. A thin film solar cell formed by the roughened transparent conducting base plate can effectively improve the current and efficiency.

The invention relates to the technical field of plasma etching, and discloses a semiconductor component, a composite coating forming method and a plasma reaction device. The semiconductor component comprises a component body, the surface of the component body is provided with a composite coating, and the composite coating comprises a plasma corrosion-resistant coating and a waterproof sacrificial layer. The plasma corrosion-resistant coating is arranged on the surface of the component body. The waterproof sacrificial layer is arranged on the surface of the plasma corrosion-resistant coating. The surface of the plasma corrosion-resistant coating is coated with the waterproof sacrificial layer, so that the plasma corrosion-resistant coating is prevented from being in contact with water, the risk that the corrosion-resistant coating loses efficacy due to hydrolysis is greatly reduced, the time for cleaning, transportation, storage or putting into use can be shortened, the plasma etching production efficiency is greatly improved, and the etching cost is reduced.

The invention belongs to the technical field of materials for chemical etching of metal materials, and particularly relates to replenishing liquid capable of prolonging the service life of hydrogen peroxide etching liquid. Relative to the total weight of the whole composition, the replenishing liquid comprises the following components in percentage by weight: 4-20% of ammonium persulfate, 8-30% ofa chelating agent, 4-20% of a regulator, 2-10% of a multifunctional additive and ultrapure water for enabling the whole composition to reach 100%. After the replenishing liquid is added into the hydrogen peroxide etching liquid which is nearly invalid after continuous etching, the service life of the etching liquid can be obviously prolonged again, the purpose of reducing the use amount of the etching liquid can be achieved, the etching cost is obviously reduced, and the replenishing liquid has very high industrial popularization value.