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Manufacturing method for roughened transparent conducting base plate

A technology of transparent conduction and manufacturing methods, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, circuits, etc. It can solve the problems of large variability in wet etching process, difficulty in controlling the same process and etching effect, and difficulty in controlling etching patterns, etc.

Inactive Publication Date: 2013-07-31
ASIATREE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The transparent conductive substrates of the above-mentioned patents are all roughened by wet etching, and it is difficult to control the etching pattern. If the etching depth is deep V-shaped, it is easy to form due to the poor surface coating of the plasma-enhanced chemical vapor deposition (PECVD) process. Defects that lead to degradation of component performance
In addition, the wet etching process is highly variable, and it is not easy to control the same process and etching effect

Method used

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  • Manufacturing method for roughened transparent conducting base plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] First, put the glass substrate into an ultrasonic oscillator and shake it with alcohol for 10 minutes. The main purpose is to remove excess organic and non-organic substances on the glass surface. Then put it into pure water and shake it for 10 minutes to remove the residue on the surface of the glass substrate. Alcohol, and then use a nitrogen gun to dry the moisture on the surface of the glass substrate, blow off the excess moisture on the surface of the glass substrate, and finally place the glass substrate in a plasma cleaning machine (O2-Plasma), and pump the cavity to a certain vacuum value , Passing an electric current produces plasma (Plasma). Clean in medium power mode for 5 minutes to remove the oxide layer or thick carbonized layer, and activate the indium tin oxide (ITO) on the glass surface to avoid excessive oxygen residue and affect the entire preparation process.

[0037] A radio frequency (RF) magnetron sputtering machine is used to deposit an indium ti...

Embodiment 2

[0042] Embodiment 2 is roughly the same as Embodiment 1. The main difference is that a 150-nm thick film of indium tin oxide (ITO) is sputtered on the glass substrate for laser engraving. The roughened transparent conductive substrate 1 produced has a light transmittance of 93.54%, the short-circuit current of the amorphous silicon thin-film solar cell increased from 8.83mA / cm2 to 9.48mA / cm2, and the efficiency increased from 4.32% to 4.86%. The efficiency of battery components is increased by about 7%.

Embodiment 3

[0044] Embodiment 3 is roughly the same as Embodiment 1. The main difference is that a 200-nanometer thick film of indium tin oxide (ITO) is sputtered on the glass substrate for laser engraving. The roughened transparent conductive substrate 1 produced has a light transmittance of 92.84%, the short-circuit current of the manufactured amorphous silicon thin-film solar cell is increased from 8.77mA / cm2 to 9.1mA / cm2, and the efficiency is increased from 3.74% to 4.56%. The efficiency of the battery module is increased by about 3.8%.

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Abstract

The invention discloses a manufacturing method for a roughened transparent conducting base plate, which mainly comprises the following steps: depositing a transparent conducting layer on a transparent base plate and covering the transparent conducting layer on one surface of the transparent base plate; and graving patterns through a laser source and roughening the surface of the transparent conducting layer. A thin film solar cell formed by the roughened transparent conducting base plate can effectively improve the current and efficiency.

Description

technical field [0001] The invention relates to a manufacturing method of a roughened transparent conductive substrate, in particular to a technique of using a laser source to engrave a pattern structure on the transparent conductive layer, thereby effectively increasing the capture of incident light and the utilization rate of light. Background technique [0002] Due to the energy crisis and the rise of environmental protection awareness, solar cells have attracted everyone's attention. In addition, due to people's accumulated experience in the production of silicon raw materials and component processing technology, silicon raw materials have become ideal solar cell materials. However, the conversion efficiency of solar cells made of silicon is limited by the fact that it can only absorb sunlight above 1.1 electron volts (eV), the loss caused by reflected light, the material's insufficient absorption of sunlight, and the carrier Many factors, such as being captured by defe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0236
CPCY02E10/50Y02P70/50
Inventor 李炳寰郭镇维
Owner ASIATREE TECH
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