Wet etching method for nitride materials

Abstract

The invention relates to a wet etching method for isotropically etching nitride materials. The method comprises the steps of: coating a photoresist on the surface of GaN, and photoetching and etchinga pattern; evaporating a layer of metal on the photoetching substrate; performing metal stripping, and removing the residual photoresist; then putting the treated GaN into corrosive solution for corrosion; and finally, immersing the etched epitaxial wafer sample into a diluted nitric acid solution to remove surface metal. The method is high in etching speed, low in etching cost and simple in process, and the surface of the etched GaN is flat, the etched pattern can be automatically regulated and controlled according to the requirement.

Description

technical field [0001] The invention relates to the field of wet etching technology for semiconductor materials, in particular to a wet etching method for nitride materials. Background technique [0002] Gallium nitride material (GaN) is widely used in high-power optoelectronic devices due to its excellent properties such as wide band gap, high breakdown voltage, and high electron saturation velocity. Etching is a critical step in the fabrication of GaN devices, and the etching process has received more and more attention. Unlike Si materials, GaN materials have a wide band gap and stable chemical and physical properties, making their wet etching process difficult, so far, the dry etching process is used to etch GaN , have not yet found a suitable wet etching method for GaN. However, this dry etching process seriously damages the device, while the etching speed of the GaN wet etching process is very slow, so it is very important to find a suitable wet process technology fo...

AI Technical Summary

Problems solved by technology

Unlike Si materials, GaN materials have a wide band gap and stable chemical and physical properties, making their wet etching process difficult, so far, the dry etching process is used to etch GaN , have not found a suitable wet etching method for GaN

However, this dry etching process can seriously damage the device, while the etching speed of the GaN wet etching process is very slow, so it is very important to find a suitable wet process technology for rapid nitride etching

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