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Semiconductor component, composite coating forming method and plasma reaction device

A plasma and composite coating technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, discharge tubes, etc., can solve the problems of coating protection function affecting plasma corrosion resistance and low production efficiency of plasma etching, etc. Achieve the effects of reducing etching costs, reducing the risk of failure, and improving efficiency

Pending Publication Date: 2022-02-22
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Abstract
  • Description
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Problems solved by technology

[0004] However, the existing plasma-corrosion-resistant coatings are prone to hydrolysis reactions with water in the environment during production and use, and the products will affect the protective function of the plasma-corrosion-resistant coatings. Plasma etched coatings cannot be directly used in etching process production, but need to be used in etching process production after long-term cycle aging treatment, and plasma etching production efficiency is low

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  • Semiconductor component, composite coating forming method and plasma reaction device
  • Semiconductor component, composite coating forming method and plasma reaction device
  • Semiconductor component, composite coating forming method and plasma reaction device

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Embodiment Construction

[0039] In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating relative importance, or implicitly indicating the quantity of indicated technical features. Therefore, unless otherwise specified, the features defined as "first" and "second" may explicitly or implicitly include one or more of these features; "plurality" means two or more. The term "comprising" and any variations thereof mean non-exclusive inclusion, possible presence or addition of one or more other features, integers, steps, operations, units, components and / or combinations thereof. It should be understood that the terminology used and specific structural and functional details disclosed herein are merely representative for describing specific embodiments, but the invention may be embodied in many alternative forms and should not be construed as merely Be limited by the examples set forth herein.

[0040] Also, Ce...

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Abstract

The invention relates to the technical field of plasma etching, and discloses a semiconductor component, a composite coating forming method and a plasma reaction device. The semiconductor component comprises a component body, the surface of the component body is provided with a composite coating, and the composite coating comprises a plasma corrosion-resistant coating and a waterproof sacrificial layer. The plasma corrosion-resistant coating is arranged on the surface of the component body. The waterproof sacrificial layer is arranged on the surface of the plasma corrosion-resistant coating. The surface of the plasma corrosion-resistant coating is coated with the waterproof sacrificial layer, so that the plasma corrosion-resistant coating is prevented from being in contact with water, the risk that the corrosion-resistant coating loses efficacy due to hydrolysis is greatly reduced, the time for cleaning, transportation, storage or putting into use can be shortened, the plasma etching production efficiency is greatly improved, and the etching cost is reduced.

Description

technical field [0001] The invention relates to the technical field of plasma etching, in particular to a semiconductor component, a composite coating forming method and a plasma reaction device. Background technique [0002] In the manufacturing process of semiconductor devices, plasma etching is a key process for processing wafers into design patterns. In a typical plasma etching process, a process gas is excited by a radio frequency (Radio Frequency, RF) to form a plasma. After passing through the electric field between the upper electrode and the lower electrode, these plasmas physically bombard and chemically react with the wafer surface, thereby etching a wafer with a specific structure. [0003] During the plasma etching process, physical bombardment and chemical reaction will also act on all parts in the etching chamber that are in contact with the plasma, causing corrosion. For the workpiece in the etching chamber, some plasma corrosion-resistant coatings are usua...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/67
CPCH01J37/32495H01J37/32477H01L21/67069H01J2237/334H01J2237/332
Inventor 段蛟孙祥杨桂林陈星建
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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