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Manufacturing method of power diode with low forward voltage drop and fast recovery time

A power diode, forward voltage drop technology, used in final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve problems such as slow recovery time and no improvement in turn-off recovery time

Active Publication Date: 2016-06-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the rectifier diode with a lower forward voltage drop is a super barrier rectifier diode. This structure uses the low turn-on voltage of the MOSFET to achieve a low forward voltage drop. However, due to the limitation of the parasitic PN junction diode in the device, resulting in no improvement in its turn-off recovery time over conventional diode
Therefore, the traditional super barrier rectifier diode is a rectifier device with low loss and slow recovery time

Method used

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  • Manufacturing method of power diode with low forward voltage drop and fast recovery time
  • Manufacturing method of power diode with low forward voltage drop and fast recovery time
  • Manufacturing method of power diode with low forward voltage drop and fast recovery time

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Embodiment Construction

[0032] The structure of the power diode with low forward voltage drop and fast recovery time according to the present invention is as follows: Image 6 As shown, it has a front metal 10 and a back metal 11 on the N-type epitaxial layer 2 .

[0033] Metal is deposited on the back of the N-type epitaxial layer 2 as the cathode of a power diode with low forward voltage drop and fast recovery time.

[0034] In the N-type epitaxial layer 2, there is a trench 3, the inner wall of the trench 3 is attached with a gate oxide layer 4 and filled with polysilicon 5, the upper part of the N-type epitaxial layer 2 has a body region 6, and the surface layer of the front surface of the N-type epitaxial layer 2 has heavy The doped P-type region 7 has a contact hole 9 filled with metal in the polysilicon 5 in the trench 3 to lead out the gate, and there is also a contact hole 9 filled with metal between the trenches 3, which is connected to the N-type epitaxial layer 2 and the N-type epitaxial...

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Abstract

The invention discloses a power diode with low forward voltage drop and fast recovery time. A Schottky diode is internally arranged between a body region and an epitaxy of a conventional MOSFET. A source electrode and a grid electrode of the front surface of the MOSFET are directly connected in a shorting way by using surface metal so that an anode of a device is formed, and a cathode of the device is formed on the reverse surface. When the device is turned on, an MOS device is conducted, a PN-junction diode and the integrated Schottky diode of the device are not turned on, and forward current of the device flows to the cathode along a channel of the MOS. When the device is turned off, the conductive channel on the structure surface of the MOS disappears, and carriers in the N-type epitaxy are taken away via a depletion layer formed by Schottky junctions. As the Schottky junctions are faster in recovery time relatively to that of PN junctions, the carries in the N-type epitaxy disappear faster than those of the PN-junction device do. Therefore, a semiconductor device with low forward conduction voltage drop and fast turn-off time can be formed. The invention also discloses a manufacturing method of the power diode with low forward voltage drop and fast recovery time.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a power diode with low forward voltage drop and fast recovery time, and also relates to a manufacturing method of the power diode with low forward voltage drop and fast recovery time. Background technique [0002] With the increasing popularity of portable electronic products such as smartphones and tablet computers, the battery life of these products has become a very big shortcoming for them. In order to improve the battery life of these portable products, the semiconductor components used in these products must have Low loss, high efficiency and other characteristics. [0003] At present, the rectifier diode with a lower forward voltage drop is a super barrier rectifier diode. This structure uses the low turn-on voltage of the MOSFET to achieve a low forward voltage drop. However, due to the limitation of the parasitic PN junction diode in the device, As a result, its turn-off r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H01L21/8249
CPCY02P70/50
Inventor 罗清威房宝青左燕丽
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP