Integrated circuit power supply ESD protection circuit

Abstract

The invention discloses an integrated circuit power supply ESD protection circuit. The integrated circuit power supply ESD protection circuit is characterized in that an ESD trigger unit sends a trigger signal to an ESD control unit based on a voltage trigger mechanism to control a channel of an ESD device to be opened for electrostatic discharge. When the circuit is in normal operation, noise of a power supply mixed with high-frequency noise can be shielded and power supply leakage caused by power supply noise fluctuation can be reduced. According to the circuit, SAB and ESD injection masks in traditional ESD design are saved, and the cost of production is saved. The integrated circuit power supply ESD protection circuit has the advantages of low cost, fast response, low threshold voltage, low power supply leakage and strong discharge capability.

Description

technical field [0001] The invention relates to an integrated circuit power supply ESD protection circuit, which is suitable for the design of integrated circuit electrostatic discharge protection, especially for the design of the power supply ESD protection circuit with fast response, low turn-on voltage, low power supply leakage, low cost and strong discharge capacity. Background technique [0002] From production to packaging, testing, transportation, and application, the entire life cycle of integrated circuits will face various unpredictable electrostatic environments, causing electrostatic damage. Therefore, the integrated circuit design must not only meet the functional requirements, but also resist certain static electricity threats. It needs to have a certain electrostatic protection capability, so the integrated circuit also needs to be designed for ESD protection. The ESD design of the power supply is very important for the ESD protection of the whole chip, becaus...

AI Technical Summary

Problems solved by technology

[0010] 1. The discharge and opening speed of traditional substrate bulk devices is slow, which affects the discharge efficiency;

[0011] 2. Traditional substrate bulk devices have a high discharge turn-on voltage and cannot protect the internal circuit;

[0012] 3. In order to solve the problem of high turn-on voltage, ESD injection can be added, but a mask needs to be added, which increases the cost;

[0013] 4. The uniformity of the substrate bulk device is poor, which may lead to breakdown failure of the ESD device itself;

[0014] 5. To solve the uniformity problem, Silicide blocking can be used, but a mask needs to be added, which increases the cost, design complexity, and layout area;

[0015] 6. The RC frequency trigger solution can solve the problem, but it also introduces the problem of increased power leakage;

[0016] 7. There is a Darlington effect in the diode string, which causes the total threshold voltage of the diode string to be lower than the expected threshold voltage

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