Plasma assisted magnetron sputtering depositing method

A plasma and sputtering deposition technology, applied in the direction of sputtering plating, ion implantation plating, metal material coating process, etc., can solve the problem of unstable working conditions, difficulty in obtaining high-purity compound films, and decreased deposition rate, etc. problem, to achieve the effect of stable coating process, improved coating efficiency, and large lens volume

Active Publication Date: 2014-03-26
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

However, because the condition range of the transition zone mode is very small, if the control is not proper, as the sputtering process progresses, the compound formed on the surface of the target will continue to increase, and the charge on the surface of the target wi

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  • Plasma assisted magnetron sputtering depositing method
  • Plasma assisted magnetron sputtering depositing method
  • Plasma assisted magnetron sputtering depositing method

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Embodiment

[0060] Alumina (Al 2 o 3 ) thin films are widely used in the fields of optics, optoelectronics, information display and storage devices due to their physical and chemical properties such as high transmittance, high chemical stability, high insulation, high temperature resistance, and high hardness. At the same time, it is also one of the preferred materials for ceramic dielectric thin films in medium and high temperature solar photothermal selective absorption coatings.

[0061] Using the ACS700 advanced magnetron sputtering coating equipment produced by Dalian Far East Vacuum Technology Co., Ltd., the trial production of aluminum oxide film was carried out by using the present invention. The unbalanced closed magnetic field medium frequency twin target reactive magnetron sputtering method is adopted, and two twin metal aluminum targets with a purity of 99.99 are used. The target area is 563mm×106mm; the distance between the target and the substrate is about 120mm. The vacuu...

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Abstract

The invention relates to a plasma assisted magnetron sputtering depositing coating method. When a metal compound thin film is prepared by magnetron sputtering, in order to overcome target poisoning, anode disappearance and the like, an intermediate frequency or pulse direct current reaction magnetron sputtering method is common adopted. The invention provides a novel plasma assisted depositing method, wherein a plasma discharge area is additionally arranged in a vacuum chamber, a work rest rotates at a high speed along with a revolution plate which revolves at the same time, and when a workpiece rotates through the plasma discharge area, combination reaction is further carried out on the incompletely reacted ultrathin thin film and gas ions to obtain a compound thin film with a higher stoichiometric ratio, so that the depositing rate of the thin film is greatly improved. Compared with conventional plasma source assisted depositing technologies, the novel plasma generating technology provided by the invention is lower in cost and easy to amplify, can be used for the field of industrialized production on a large scale, and has an important application prospect.

Description

technical field [0001] The invention relates to a new plasma-assisted magnetron sputtering deposition coating technology. Compared with the traditional plasma source-assisted deposition technology, the plasma-assisted deposition technology has low cost, strong engineering magnification, large workpiece loading, and easy deposition. The method has fast speed and high coating efficiency, can be used in large-scale industrial production lines, and has important application prospects in the field of magnetron sputtering coating. Background technique [0002] The development of modern surface engineering increasingly requires the use of various compound films, and reactive magnetron sputtering technology is one of the main ways to deposit compound films. Reactive magnetron sputtering uses high-purity metal targets and feeds certain reactive gases, such as oxygen and nitrogen, to react and deposit compound films. Since both the metal target and the gas are easy to obtain high pur...

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Application Information

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IPC IPC(8): C23C14/35
Inventor 李刚孙龙金玉奇
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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