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A method and device for preparing a multi-substance atomic layer deposition film

A technology of atomic layer deposition and preparation equipment, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of not being able to control the reaction temperature in real time, and not be able to quickly deposit multi-substance atomic layer deposition films, etc., to achieve Reduced preparation time, low power consumption, and high efficiency

Active Publication Date: 2016-04-13
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Aiming at the above defects or improvement needs of the prior art, the present invention provides a method and device for preparing different kinds of atomic layer deposition films. Layer deposition technology cannot control the reaction temperature in real time, so that the technical problem of rapid deposition of multi-substance atomic layer deposition film cannot be achieved

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  • A method and device for preparing a multi-substance atomic layer deposition film
  • A method and device for preparing a multi-substance atomic layer deposition film

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Experimental program
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Embodiment 1

[0034] By applying the multi-substance atomic layer deposition film preparation method provided by the invention, aluminum oxide and titanium oxide films are alternately deposited on a silicon substrate.

[0035] Deposited Al 2 o 3 film, precursor A is trimethylaluminum, precursor B is H 2 0. deposited TiO 2 film, precursor C is titanium tetrachloride, precursor D is H 2 0. ALD1 region grows Al 2 o 3 film, ALD2 region grown TiO 2 membrane. The spacing between the inlets of the substrate precursor is 1 mm. The temperature in the ALD1 area is set at 150°C, and the temperature in the ALD2 area is set at 180°C.

[0036] The movement speed of the silicon substrate is set to 0.1m / s, the silicon substrate moves to the ALD1 area, and its temperature is heated to 150°C, the silicon substrate first removes the precursor A trimethylaluminum to undergo atomic layer deposition half-reaction, and then Atomic layer deposition half-reaction occurs with precursor B water vapor to de...

Embodiment 2

[0038] A multi-substance atomic layer deposition film preparation device for sequentially depositing Al on a silicon substrate 2 o 3 film, TiO 2 Membrane, ZnO membrane, including atomic layer deposition reaction chamber, substrate carrying platform, motion platform and temperature control device.

[0039] The atomic layer deposition reaction chamber is sequentially provided with three atomic layer deposition systems. The atomic layer deposition system is used to complete the Al 2 o 3 film, TiO 2 The atomic layer deposition reaction of the film and the ZnO film is a corresponding atomic layer deposition reaction system (ALD) in the prior art. In the existing traditional spatial isolation atomic layer deposition system, the precursor, the isolation gas inlet and the residual gas outlet are all processed into an integral structure. In the reaction system, the shape of the inlet and the outlet are both rectangular parallelepiped grooves, with a length of 40mm , the width is ...

Embodiment 3

[0045] A multi-substance atomic layer deposition film preparation device for alternately depositing Al on a silicon substrate 2 o 3 film and TiO 2 Membrane, including atomic layer deposition reaction chamber, substrate carrying platform, motion platform and temperature control device.

[0046] The atomic layer deposition reaction chamber is sequentially provided with two atomic layer deposition systems. The atomic layer deposition system is used to complete the Al 2 o 3 film and TiO 2 The atomic layer deposition reaction of the film, for the removable atomic layer deposition system. The detachable atomic layer deposition system includes a cavity support frame and 7 detachable nozzles arranged in sequence. The size of the gas outlet is 30mm*20mm. The detachable nozzles are fixed on the cavity bracket by screws. The side of the body support frame is provided with an isolation gas inlet. Deposit Al in the area directly under the 1st to 4th nozzles 2 o 3 Membrane, TiO dep...

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Abstract

The invention discloses a multi-substance atomic layer deposition film making method and an apparatus thereof. The method is characterized in that a substrate linearly moves relative to an atomic layer deposition reaction chamber, and sequentially goes through atomic layer deposition systems arranged in the reaction chamber and used for complementing different atomic layer deposition, and the temperature of the substrate is adjusted to a most appropriate temperature of a corresponding atomic layer deposition reaction. The apparatus comprises the atomic layer deposition reaction chamber, a substrate supporting bench, a motion platform and a temperature control device; the atomic layer deposition reaction chamber is sequentially provided with the atomic layer deposition systems; the substrate supporting bench is arranged below the atomic layer deposition reaction chamber; the motion platform is connected with the substrate supporting bench, and drives the substrate supporting bench to move; and the temperature control device is arranged below the substrate supporting bench. The multi-substance atomic layer deposition film can be effectively and rapidly made through the method; and the apparatus can conveniently assembled through present atomic layer deposition systems, and has the advantages of strong compatibility, low power consumption and high deposition efficiency.

Description

technical field [0001] The invention belongs to the field of atomic deposition coating, and more specifically relates to a method and device for preparing a multi-substance atomic layer deposition film. Background technique [0002] With the demand and development of semiconductor technology, higher requirements are also put forward for semiconductor manufacturing technology. The demand for semiconductor materials with smaller size and better performance is also stronger. Thin film technology is an important part of semiconductor technology and plays an important role in the development of semiconductor technology. In many fields, due to functional requirements, thin film structures in the form of stacked structures are often used. Atomic layer deposition (ALD) technology, as a thin film deposition technology, plays an increasingly important role in the field of thin film deposition. Due to the self-limiting nature of the atomic layer deposition reaction, the thickness of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/458C23C16/52
Inventor 陈蓉褚波何文杰高玉乐单斌文艳伟
Owner HUAZHONG UNIV OF SCI & TECH