Growing method for high-quality CuI crystals

A growth method and crystal technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of poor shape, size and size not mentioned, etc., to achieve good integrity, low cost, convenient and safe to use Effect

Active Publication Date: 2014-04-02
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A.F.Armington and J.J.O’Connor et al. used the complexation-decomplexation method to grow CuI crystals in 1968 and 1971 re

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Growing method for high-quality CuI crystals
  • Growing method for high-quality CuI crystals
  • Growing method for high-quality CuI crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Below in conjunction with specific implementation preferred scheme further illustrate how the present invention is realized:

[0021] 1. Preparation of Saturated Solution

[0022] Weigh analytically pure NH 4 I28.9880g is placed in a 125mL wide-mouth bottle, add 100mL high-purity water, stir at room temperature, and prepare 2M NH 4 I solution. To the prepared NH 4 Add 1.9684g of CuI powder into the I solution, heat to 70°C, stir for a period of time, the CuI powder is completely dissolved, and a saturated solution of CuI is obtained, and the solution is pale yellow at this time.

[0023] 2. Preparation of Growth Seeds

[0024] Spontaneous crystallization and cultivation of seed crystals were carried out by using an aqueous solution cooling method. Choose NH 4 The I (2M) solution was used as the solvent, and the copper sheet was used as the reducing agent. A saturated solution of CuI at 70°C was prepared in a 125mL jar with a paraffin oil seal, sealed with a cap, a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a growing method for high-quality CuI crystals, belonging to the field of crystal growth in a photoelectric functional material technology. According to the method, NH4Cl, NH4Br, NH4I and the like are used as cosolvent, a copper sheet is used as reducer, the growing temperature is 70-40 DEG C, and the crystals are grown through a water solution temperature difference method. The temperature difference method growth technology adopted by the invention has the advantages that the growing equipment is simple, the cost is low, the growing temperature is low, the crystal growth is not limited by solubility and the like; and the grown CuI crystals have high purity, favorable uniformity and large size, so that the CuI crystals can serve as a new generation of ultra-fast scintillation crystals, thus hopefully playing important roles in measurement of ultra-high-counting-rate electrons, gamma rays and X rays in the future, and meanwhile, the CuI crystals also serve as a semiconductor material for a solar cell material, a superconducting material and a photocatalytic material.

Description

technical field [0001] The invention relates to the field of crystal growth in photoelectric functional material technology, in particular to a growth method of CuI crystal. Background technique [0002] This century is in the era of optoelectronics. The optoelectronic functional materials in functional materials have both the stability of electronic materials and the advanced nature of photonic materials. They will be widely used in the era of optoelectronics. Efforts have been made to find new ultrafast scintillation materials for applications in high-energy physics and nuclear physics, and many important progresses have been made, among which there is a wide forbidden range for near-band-edge emission (fast electron-hole recombination is possible). Band semiconductor materials (Eg greater than or equal to 3.2eV) have become one of the hotspots of widespread concern. [0003] Cuprous iodide (CuI) has three crystal phases of α, β, and γ. It is a sphalerite structure (γ-CuI...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B7/08C30B29/12
Inventor 庄欣欣吕洋洋叶李旺许智煌苏根博
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap