Measuring method of deep-hole copper plating accelerant

A measurement method and accelerator technology, applied in the field of thin film material manufacturing, electrochemical technology application, and semiconductor manufacturing, can solve problems such as the inability to evaluate the cathode process to judge the effect and effect of additives, and achieve the effect of promoting industrial application

Active Publication Date: 2014-04-02
SHANGHAI JIAO TONG UNIV
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Problems solved by technology

However, since this method is based on the determination of the total amount of copper dissolved in the anode process, this analysis method cannot evaluate the cathode process that affe

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Embodiment 1

[0028] This embodiment relates to a method for determining the content of a copper interconnect electroplating accelerator, and the specific steps are as follows:

[0029] (1) The Au electrode is used as the working electrode, the TSV copper plating solution is used as the electrolyte, the saturated calomel electrode is used as the reference electrode, and the platinum sheet is used as the counter electrode to form a three-electrode system.

[0030] (2) Measure the cathodic polarization curve of the basic plating solution, the composition of the basic plating solution: the concentration of copper ions is 40g / L, the concentration of chloride ions is 50ppm, and the pH value is 1;

[0031] (3) Add 300ppm polyethylene glycol (PEG) to the basic plating solution, and measure its cathodic polarization curve, such as figure 2 (0), the inhibitory effect of PEG can be observed.

[0032] (4) Add 300ppm of PEG to the basic plating solution and keep the concentration constant, then add d...

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Abstract

The invention relates to a measuring method of a deep-hole copper plating accelerant. The measuring method comprises the following steps: (1) forming a three-electrode system by a metal electrode, an inert metal sheet and a saturated calomel electrode which are taken as a working electrode, a counter electrode and a reference electrode respectively, and selecting a copper electroplating solution; (2) measuring a cathodic polarization curve of an accelerant-free basic electroplating solution; (3) adding accelerants of different concentration into the basic electroplating solution, and respectively measuring corresponding cathodic polarization curves; (4) comparing the cathodic polarization curve of the step (2) with the cathodic polarization curves of the step (3), and analyzing relevant parameters of the curves so as to acquire a quantitative relation curve between relevant electrochemical parameters and the concentration of the accelerants; and (5) measuring an actual to-be-measured copper plating solution by the same electrode system so as to obtain a result. By taking the cathodic polarization curves as measuring objects, the measuring method is close to an actual electroplating process, so that the management and process quality control of the copper electroplating solution are directed, and the industrial application of a TSV copper electroplating process is promoted.

Description

technical field [0001] The invention belongs to the fields of semiconductor manufacturing, thin film material manufacturing and electrochemical technology application, and in particular relates to a method for measuring a deep hole copper plating accelerator. Background technique [0002] At present, deep-hole copper plating technologies for chip Damascus copper interconnection, wiring in PCB boards, and through-silicon-hole vertical copper interconnections are more and more widely used in the field of microelectronics manufacturing, and the complete filling technology of these deep-hole copper plating It largely depends on the function of additives. At present, according to the different functions of additives, it can be roughly divided into three types: accelerators, inhibitors and leveling agents. Accelerators and inhibitors play a major role in the process. Since most of the additives that play a key role in the plating solution are organic surfactants, their concentrat...

Claims

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Application Information

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IPC IPC(8): G01N27/48
Inventor 李明孙琪曹海勇李义
Owner SHANGHAI JIAO TONG UNIV
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